Abstract:Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using Landau-Denvonshire theory, identifying three (one) critical dielectric thicknesses for first (second) order ferroelectric phase transition upon which the stability of negative capacitance changes. A critical electric window is also identified, beyond which the ferroelectric negative capacitance cannot be maintained. Between the first and second critical thicknesses, meta-stable negative capacitance exists near zero polarization, yet it will be lost and cannot be recovered when the electric window is broken. Between the second and third critical thicknesses, stable negative capacitance always exists near zero polarization within the electric window regardless of initial polar state, resulting in hysteretic double P-E loop. Beyond the third (first) critical thickness of first (second) order phase transition, P-E loop becomes hysteresis free, though the spontaneous polarization can still be induced at sufficient large electric field. Singularities in the effective dielectric constant is also observed at the critical thickness or electric field. The analysis demonstrates that the negative capacitance of ferroelectric can be stabilized by linear dielectric within a critical electric window, and the negative capacitance can be either hysteresis free or hysteretic for first order ferroelectrics, while it is always hysteresis free for the second order ferroelectrics.

A possible mechanism for the negative capacitance observed in organic devices

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Negative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism

Negative Capacitance in Doped Bi-Layer Organic Light-Emitting Devices

Negative Capacitance in Light-Emitting Devices

A Carrier-Based Analytic Theory For Electrical Simulation Of Negative Capacitance Surrounding Gate Ferroelectric Capacitor

Spatially resolved steady-state negative capacitance

First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films

Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect

Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures

2D Negative Capacitance Field-Effect Transistor with Organic Ferroelectrics

Investigation of Negative Capacitance Effect from Domain Switching Dynamics

Channel Doping Effects in Negative Capacitance Field-Effect Transistors

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Negative Capacitance in Polymer Light-Emitting Diodes

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

On the negative capacitance in ferroelectric heterostructures

Negative Transconductance in Multi-Layer Organic Thin-Film Transistors

Study on the Basic Capacitance–voltage Characteristics of Organic Molecular Semiconductors

Negative Electrochemical Capacitance for a Double-Quantum-dot Device