Abstract:Negative capacitance is a newly discovered state of ferroelectric materials that holds promise for electronics applications by exploiting a region of thermodynamic space that is normally not accessible1–14. Although existing reports of negative capacitance substantiate the importance of this phenomenon, they have focused on its macroscale manifestation. These manifestations demonstrate possible uses of steady-state negative capacitance—for example, enhancing the capacitance of a ferroelectric–dielectric heterostructure4,7,14 or improving the subthreshold swing of a transistor8–12. Yet they constitute only indirect measurements of the local state of negative capacitance in which the ferroelectric resides. Spatial mapping of this phenomenon would help its understanding at a microscopic scale and also help to achieve optimal design of devices with potential technological applications. Here we demonstrate a direct measurement of steady-state negative capacitance in a ferroelectric–dielectric heterostructure. We use electron microscopy complemented by phase-field and first-principles-based (second-principles) simulations in SrTiO3/PbTiO3 superlattices to directly determine, with atomic resolution, the local regions in the ferroelectric material where a state of negative capacitance is stabilized. Simultaneous vector mapping of atomic displacements (related to a complex pattern in the polarization field), in conjunction with reconstruction of the local electric field, identify the negative capacitance regions as those with higher energy density and larger polarizability: the domain walls where the polarization is suppressed.

Negative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism

Negative Capacitance in Light-Emitting Devices

A possible mechanism for the negative capacitance observed in organic devices

Negative Capacitance in Doped Bi-Layer Organic Light-Emitting Devices

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA

Negative Capacitance in Polymer Light-Emitting Diodes

Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures

Elucidating Negative Capacitance In Light-Emitting Diodes Using An Advanced Semiconductor Device Theory

Bipolar charge-carrier injection in semiconductor/insulator/conductor heterostructures: self-consistent consideration

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Spatially resolved steady-state negative capacitance

Electric field induced negative capacitance in semiconducting polymer

Negative Capacitance beyond Ferroelectric Switches

Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect

Negative Capacitance in Gan/Algan Heterojunction Dual-Band Detectors

Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices

Charge Transport Characteristics in Doped Organic Semiconductors Using Hall Effect

Negative Transconductance in Multi-Layer Organic Thin-Film Transistors

Effect of Interface States on Negative Capacitance Characteristics in GaAs Homojunction Far-Infrared Detectors

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET