The effects of carbon dioxide management on plasma levels of fentanyl and sufentanil during hypothermic cardiopulmonary bypass.

D. A. Cross,D. Nikas

DOI: https://doi.org/10.1016/1053-0770(94)90196-1

IF: 2.894

1994-12-01

Journal of Cardiothoracic and Vascular Anesthesia

Abstract:

What problem does this paper attempt to address?

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Weiwei Gao,Asif Khan,Xavi Marti,Chris Nelson,Claudy Serrao,Jayakanth Ravichandran,Ramamoorthy Ramesh,Sayeef Salahuddin

DOI: https://doi.org/10.1021/nl502691u

IF: 10.8

2014-01-01

Nano Letters

Abstract:We demonstrate room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructre. In epitaxially grown superlattice of ferroelectric BSTO (Ba0.8Sr0.2TiO3) and dielectric LAO (LaAlO3), capacitance was found to be larger compared to the constituent LAO (dielectric) capacitance. This enhancement of capacitance in a serires combination of two capacitors indicates that the ferroelectric was stablized in a state of negative capacitance. Negative capacitance was observed for superlattices grown on three different substrates (SrTiO3 (001), DyScO3 (110), and GdScO3 (110)) covering a large range of substrate strain. This demonstrates the robustness of the effect as well as potential for controlling the negative capacitance effect using epitaxial strain. Room-temperature demonstration of negative capacitance is an important step toward lowering the subthreshold swing in a transistor below the intrinsic thermodynamic limit of 60 mV/decade and therby improving energy efficiency.
Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Luqi Tu,Xudong Wang,Jianlu Wang,Xiangjian Meng,Junhao Chu

DOI: https://doi.org/10.1002/aelm.201870051

IF: 6.2

2018-01-01

Advanced Electronic Materials

Abstract:Negative capacitance field-effect transistors (NCFETs) achieve ultra-low sub-threshold swing through internal voltage amplification, stemming from the negative capacitance effect during the ferroelectric polarization switching process. In article number 1800231, Jianlu Wang and co-workers review the theoretical and experimental results of NCFETs based on various gate structures and typical ferroelectrics. Novel NCFET structures, combined with 2D materials and FinFET, show great prospects for the future.
Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

R. Deepa,M. Parimala Devi,N. Arun Vignesh,S. Kanithan

DOI: https://doi.org/10.1007/s12633-022-01722-7

IF: 3.4

2022-02-22

Silicon

Abstract:With the constant increase in power dissipation of nanoscale transistors, the almost four-decade-old cycle of performance advancement in complementary metal–oxide–semiconductor (CMOS) technology is in danger of being disrupted. As revealed in the first study, negative capacitance states in an isolated ferroelectric capacitor can be identified almost instantly when the capacitor is switched on. Increasing ferroelectric volume fraction depolarization, as demonstrated by phase-field modelling, results in rapid expansion of domain walls, which results in a negative capacitance signature. One must understand how the ferroelectric material is connected to the interfacial oxide and semiconductor, as well as how negative capacitance values can be achieved, in order to obtain amplification and margin of error. If one can adhere to these guidelines, your design will be optimized and free of hysteresis issues. The negative capacitance effect of ferroelectric oxides, according to our research, can be leveraged to drastically minimize power dissipation in nanoscale semiconductor transistors. The SS can be reduced to less than 60 mV/dec by using FETs with negative capacitance, such as FE-FETs and other comparable devices. These FETs' gate dielectric is comprised of an unstable substance, making them unstable.

materials science, multidisciplinary,chemistry, physical
Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

Hui Quan,Dehuan Meng,Xuezhou Ma,Chenguang Qiu

DOI: https://doi.org/10.1021/acsami.3c06161

2023-09-27

Abstract:Boltzmann distribution thermal tails of carriers restrain the subthreshold swing (SS) of field-effect transistors (FETs) to be lower than 60 mV/decade at room temperature, which restrains the reduction of operate-voltage and power consumption of transistors. The negative-capacitance FET (NC FET) is expected to break through this physical limit and obtain a steep SS by amplifying the gate voltage through the negative capacitance effect of the ferroelectric thin film, providing a new way to further reduce the power consumption of the transistor at the end of Moore's law. Here, we show a MoS2 NC FET with a CuInP2S6 ferroelectric, exhibiting a large on/off ratio of 108, a steep SS as low as 6 mV/decade, and a wide sub-60 mV/decade drain current range of more than 4 orders of magnitude while sacrificially inducing a huge hysteresis larger than 500 mV. Furthermore, we found that by inserting the h-phase boron nitride (h-BN) layer with suitable thickness, the dielectric capacitance matches the ferroelectric negative capacitance better, and thus the hysteresis on the transfer curve is reduced, and the ideal switching-behavior transistors with SS as low as 62 mV/decade and only 5 mV negligible hysteresis were obtained. Our work demonstrates that under the capacitance-matching condition, the hysteresis-free negative-capacitance transistors do not act as the predicted steep-slope transistors, but their voltage-saving still occurs instead as a type of effective transconductance booster with more than 20 times transconductance amplification.
On the negative capacitance in ferroelectric heterostructures

Yuchu Qin,Jiangyu Li

2024-09-10

Abstract:Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using Landau-Denvonshire theory, identifying three (one) critical dielectric thicknesses for first (second) order ferroelectric phase transition upon which the stability of negative capacitance changes. A critical electric window is also identified, beyond which the ferroelectric negative capacitance cannot be maintained. Between the first and second critical thicknesses, meta-stable negative capacitance exists near zero polarization, yet it will be lost and cannot be recovered when the electric window is broken. Between the second and third critical thicknesses, stable negative capacitance always exists near zero polarization within the electric window regardless of initial polar state, resulting in hysteretic double P-E loop. Beyond the third (first) critical thickness of first (second) order phase transition, P-E loop becomes hysteresis free, though the spontaneous polarization can still be induced at sufficient large electric field. Singularities in the effective dielectric constant is also observed at the critical thickness or electric field. The analysis demonstrates that the negative capacitance of ferroelectric can be stabilized by linear dielectric within a critical electric window, and the negative capacitance can be either hysteresis free or hysteretic for first order ferroelectrics, while it is always hysteresis free for the second order ferroelectrics.

Applied Physics,Materials Science
Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor

Debottam Daw,Houcine Bouzid,Moonyoung Jung,Dongseok Suh,Chandan Biswas,Young Hee Lee

DOI: https://doi.org/10.1002/adma.202304338

Abstract:Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by efficient modulation of surface potential in transistors. While negative-capacitance transition is reported in polycrystalline Pb(Zr0.2Ti0.8)O3 (PZT) and HfZrO2 (HZO) thin-films in few microseconds timescale, low SS is not persistent over a wide range of drain current when used instead of conventional dielectrics. In this work, the clear nano-second negative transition states in 2D single-crystal CuInP2S6 (CIPS) flakes have been demonstrated by an alternative fast-transient measurement technique. Further, integrating this ultrafast NC transition with the localized density of states of Dirac contacts and controlled charge transfer in the CIPS/channel (MoS2/graphene) a state-of-the-art device architecture, negative capacitance Dirac source drain field effect transistor (FET) is introduced. This yields an ultralow SS of 4.8 mV dec-1 with an average sub-10 SS across five decades with on-off ratio exceeding 107, by simultaneous improvement of transport and body factors in monolayer MoS2-based FET, outperforming all previous reports. This approach could pave the way to achieve ultralow-SS FETs for future high-speed and low-power electronics.
Ferroelectric Negative Capacitance Field Effect Transistor

Luqi Tu,Xudong Wang,Jianlu Wang,Xiangjian Meng,Junhao Chu

DOI: https://doi.org/10.1002/aelm.201800231

IF: 6.2

2018-08-15

Advanced Electronic Materials

Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Graphene-Integrated Negative Quantum Capacitance Field-Effect Transistor With Sub-60-mV/dec Switching

Hao Zhu,Yafen Yang,Xinyi Zhu,Parameswari Raju,Dimitris E. Ioannou,Qiliang Li

DOI: https://doi.org/10.1109/ted.2023.3294365

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:The aggressive scaling of metal–oxide–semiconductor field-effect transistor (MOSFET) has urged advanced device technology overcoming the 60-mV/dec limit of subthreshold slope (SS) at room temperature. The introduction of a negative component in the FET gate capacitance has been proven effective to realize steep-slope switching. Here, we report a sub-60-mV/dec MoS2 negative quantum capacitance FET (NQCFET) with single-layer (SL) graphene integrated in the gate-stack. The negative quantum capacitance from the low density of states (DOS) is strongly associated with the electron system of the 2-D SL graphene. With this negative contribution to the gate capacitance, subthermionic switching is achieved in the NQCFET with a minimum SS of 31 mV/dec. This prototype device illustrates a feasible approach to realize negative quantum capacitance in an FET architecture and opens attractive pathways for future steep-slope and low-power electronic device applications.

engineering, electrical & electronic,physics, applied
Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors

Ali Saeidi,Farzan Jazaeri,Igor Stolichnov,Christian C. Enz,Adrian M. ionescu

DOI: https://doi.org/10.48550/arXiv.1804.09622

2018-04-27

Abstract:Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative Capacitance (NC) in ferroelectric materials is proposed in order to address this physical limitation of CMOS technology. A polarization destabilization in ferroelectrics causes an effective negative permittivity, resulting in a differential voltage amplification and a reduced subthreshold swing when integrated into the gate stack of a transistor. Recent demonstrations of negative capacitance concerned mainly n-type MOSFETs and their subthreshold slope. An effective technology booster should be capable of improving the performance of both n- and p-type transistors. In this work, we report a significant enhancement in both digital (subthreshold swing, on-current over off-current ratio, and overdrive) and analog (transconductance and current efficiency factor) FoM of commercial 28nm CMOS process by exploiting a PZT capacitor as the negative capacitance booster. Accordingly, a sub-thermal swing down to 10 mV/decade together with an enhanced current efficiency factor up to 10$^5$ V$^{-1}$ is obtained in both n- and p-type MOSFETs at room temperature. The overdrive voltage is enhanced up to 0.45 V, leading to a supply voltage reduction of 50\%.

Applied Physics
Sub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric component

Peng Wu,Joerg Appenzeller

DOI: https://doi.org/10.1021/acsnano.0c10344

2020-12-02

Abstract:Negative capacitance field-effect transistors (NC-FETs) have attracted wide interest as promising candidates for steep-slope devices, and sub-60 mV/decade switching has been demonstrated in NC-FETs with various device structures and material systems. However, the detailed mechanisms of the observed steep-slope switching in some of these experiments are under intense debate. Here we show that sub-60 mV/decade switching can be observed in a WS2 transistor with a metal-insulator-metal-insulator-semiconductor (MIMIS) structure - without any ferroelectric component. This structure resembles an NC-FET with internal gate, except that the ferroelectric layer is replaced by a leaky dielectric layer. Through simulations of the charging dynamics during the device characterization using an RC network model, we show that the observed steep-slope switching in our "ferroelectric-free" transistors can be attributed to the internal gate voltage response to the chosen varying gate voltage scan rates. We further show that a constant gate voltage scan rate can also lead to transient sub-60 mV/decade switching in an MIMIS structure with voltage dependent internal gate capacitance. Our results indicate that the observation of sub-60 mV/decade switching alone is not sufficient evidence for the successful demonstration of a true steep-slope switching device and that experimentalists need to critically assess their measurement setups to avoid measurement-related artefacts.

Mesoscale and Nanoscale Physics
Spatially resolved steady-state negative capacitance

Ajay K. Yadav,Kayla X. Nguyen,Zijian Hong,Pablo García-Fernández,Pablo Aguado-Puente,Christopher T. Nelson,Sujit Das,Bhagwati Prasad,Daewoong Kwon,Suraj Cheema,Asif I. Khan,Chenming Hu,Jorge Íñiguez,Javier Junquera,Long-Qing Chen,David A. Muller,Ramamoorthy Ramesh,Sayeef Salahuddin

DOI: https://doi.org/10.1038/s41586-018-0855-y

IF: 64.8

2019-01-01

Nature

Abstract:Negative capacitance is a newly discovered state of ferroelectric materials that holds promise for electronics applications by exploiting a region of thermodynamic space that is normally not accessible1–14. Although existing reports of negative capacitance substantiate the importance of this phenomenon, they have focused on its macroscale manifestation. These manifestations demonstrate possible uses of steady-state negative capacitance—for example, enhancing the capacitance of a ferroelectric–dielectric heterostructure4,7,14 or improving the subthreshold swing of a transistor8–12. Yet they constitute only indirect measurements of the local state of negative capacitance in which the ferroelectric resides. Spatial mapping of this phenomenon would help its understanding at a microscopic scale and also help to achieve optimal design of devices with potential technological applications. Here we demonstrate a direct measurement of steady-state negative capacitance in a ferroelectric–dielectric heterostructure. We use electron microscopy complemented by phase-field and first-principles-based (second-principles) simulations in SrTiO3/PbTiO3 superlattices to directly determine, with atomic resolution, the local regions in the ferroelectric material where a state of negative capacitance is stabilized. Simultaneous vector mapping of atomic displacements (related to a complex pattern in the polarization field), in conjunction with reconstruction of the local electric field, identify the negative capacitance regions as those with higher energy density and larger polarizability: the domain walls where the polarization is suppressed.

multidisciplinary sciences
NEW UNDERSTANDING OF NEGATIVE CAPACITANCE DEVICES FOR LOW-POWER LOGIC APPLICATIONS

Qianqian Huang,Huimin Wang,Yang Zhao,Mengxuan Yang,Zhongxin Liang,Kunkun Zhu,Ru Huang

DOI: https://doi.org/10.1109/cstic.2019.8755650

2019-01-01

Abstract:This paper presents the new physical understanding of negative capacitance (NC) and hysteresis behaviors in ferroelectric-based NC-FETs for low-power logic applications. Instead of traditional stabilized switching theory, we demonstrate that the dynamic polarization switching of ferroelectric is the physical origin of the NC phenomenon which can be only obtained under relatively low frequency. Moreover, it is found that there is an intrinsic optimization conflict between the subthreshold slope and hysteresis under low frequency applications, considering both the sweeping voltage and ferroelectric parameters. The direct experimental observation of NC phenomenon in a standalone ferroelectric capacitor and the transient measurement results of fabricated NC devices further confirm the theoretical results.
Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

Eugene A. Eliseev,Anna N. Morozovska,Lesya P. Yurchenko,Maksym V. Strikha

DOI: https://doi.org/10.48550/arXiv.2208.13187

2022-08-28

Abstract:We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ferroelectric HfO2. It appeared possible to achieve a quasi-steady-state negative capacitance of the HfO2 layer, C_(HfO_2 )<0, if the layer thickness is close to the critical thickness of the size-induced ferroelectric-paraelectric phase transition. The quasi-steady-state negative capacitance, being a very slow-varying transient state of the ferroelectric, corresponds to a positive capacitance of the whole system, and so its appearance does not break any thermodynamic principle. Implementation of the quasi-steady-state negative capacitance C_ins of the gate insulator can open the principal possibility to reduce the MOSFET subthreshold swing below the critical value, and to decrease the gate voltage below the fundamental Boltzmann limit. However, we failed to found the parameters for which C_ins is negative in the quasi-steady states; and thus, the negative C_(HfO_2 ) cannot reduce the subthreshold swing below the fundamental limit. Nevertheless, the increase in C_ins, related with C_(HfO_2 )<0, can decrease the swing above the limit, reduce device heating during the operation cycles, and thus contribute to further improvements of the MOSFET performances.

Applied Physics,Mesoscale and Nanoscale Physics,Materials Science
Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

Nadim Chowdhury,S. M. Farhaduzzaman Azad,Quazi D.M. Khosru

DOI: https://doi.org/10.1149/05816.0001ecst

2014-04-19

Abstract:In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device effectively combines two different mechanisms of lowering the sub threshold swing (SS) for a transistor garnering a further lowered one compared to conventional TFET. A simple yet accurate analytical tunnel current model for the proposed device is also presented here. The developed analytical model demonstrates high ON current at low $V_{GS}$ and exhibits lower SS.

General Physics
Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

S. Kanithan,N. Arun Vignesh,S. Jana,C. Gokul Prasad,E. Konguvel,S. Vimalnath

DOI: https://doi.org/10.1007/s12633-021-01625-z

IF: 3.4

2022-02-03

Silicon

Abstract:The electrical properties of ferroelectric (Fe) FETs with Negative Capacitance (NC) have been explored theoretically at temperatures ranging from -280 to +360 degrees Celsius. Temperature influences ferroelectric thin film surface potential amplification with a fixed thickness, according to the findings. As the temperature of the ferroelectric NC effect rises, the device's transfer and output qualities deteriorate. The findings of this work could be used in the future to help improve FeFET design and performance for applications that require low power dissipation. The NC effect in symmetric long channel double-gate Junctionless transistors with two gates is predicted using an analytical model based on the charge principle. We explored the effect of ferroelectric thickness on I-V characteristics to better understand ferroelectric materials. In our model, positive capacitance lowers short channel effects while enhancing current overdrive, resulting in lower power consumption and more efficient transistor size scaling. Based on our calculations for a long channel Junctionless with NC, the device's ON current will be six times higher than that of a Junctionless FET. We use oxygen ion mobility to explain sub-60 mV/dec results in thin-film Ta2O5/ZnO transistors with dynamic gate bias sweep. The oxygen ions in Ta2O5 direct the model in dynamic gate bias sweep, resulting in NC. When achieving a sub 60 mV/decade subthreshold slope, the study finishes by revealing design tradeoffs that give an engineer or physicist insight into the current status of ferroelectric nanowires and ferroelectric FETs' uses and limitations.

materials science, multidisciplinary,chemistry, physical
Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

Felicia A. McGuire,Zhihui Cheng,Katherine Price,Aaron D. Franklin

DOI: https://doi.org/10.1063/1.4961108

IF: 4

2016-08-29

Applied Physics Letters

Abstract:There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challenges to such NC-FETs is the variable substrate capacitance exhibited in 3D semiconductor channels (bulk, Fin, or nanowire) that minimizes the extent of sub-60 mV/decade switching. In this work, we demonstrate 2D NC-FETs that combine the NC effect with 2D MoS2 channels to extend the steep switching behavior. Using the ferroelectric polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)), these 2D NC-FETs are fabricated by modification of top-gated 2D FETs through the integrated addition of P(VDF-TrFE) into the gate stack. The impact of including an interfacial metal between the ferroelectric and dielectric is studied and shown to be critical. These 2D NC-FETs exhibit a decrease in subthreshold swing from 113 mV/decade down to 11.7 mV/decade at room temperature with sub-60 mV/decade switching occurring over more than 4 decades of current. The P(VDF-TrFE) proves to be an unstable option for a device technology, yet the superb switching behavior observed herein opens the way for further exploration of nanomaterials for extremely low-voltage NC-FETs.

physics, applied
Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2

Seunguk Song,Kwan-Ho Kim,Srikrishna Chakravarthi,Zirun Han,Gwangwoo Kim,Kyung Yeol Ma,Hyeon Suk Shin,Roy H. Olsson,Deep Jariwala

DOI: https://doi.org/10.1063/5.0169689

IF: 4

2023-10-30

Applied Physics Letters

Abstract:Al0.68Sc0.32N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory applications have been demonstrated, a device for logic applications with minimal hysteresis has not been reported. This study reports on the transport characteristics of a MoS2 negative capacitance FET (NCFET) based on an AlScN ferroelectric material. We experimentally demonstrate the effect of a dielectric layer in the gate stack on the memory window and subthreshold swing (SS) of the NCFET. We show that the hysteresis behavior of transfer characteristics in the NCFET can be minimized with the inclusion of a non-ferroelectric dielectric layer, which fulfills the capacitance-matching condition. Remarkably, we also observe the NC effect in MoS2/AlScN NCFETs arrays based on large-area monolayer MoS2 synthesized by chemical vapor deposition, showing the SS values smaller than its thermionic limit (∼36 to 60 mV/dec) and minimal variation in threshold voltages (<20 mV).

physics, applied
Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

Yu-Hung Liao,Daewoong Kwon,Suraj Cheema,Nirmaan Shanker,Ava J. Tan,Ming-Yen Kao,Li-Chen Wang,Chenming Hu,Sayeef Salahuddin

DOI: https://doi.org/10.1109/ted.2021.3049763

IF: 3.1

2021-03-01

IEEE Transactions on Electron Devices

Abstract:Measurements on ultrathin body negative-capacitance (NC) field-effect transistors are shown to display subthreshold behaviors that cannot be explained as a classical MOSFET. Subthreshold swing (SS) at low drain bias decreases with increased gate bias for devices measured over multiple gate lengths down to 30 nm. In addition, improvement in the SS relative to control devices shows a nonmonotonic dependence on the gate length. Using a Landau–Khalatnikov ferroelectric (FE) model calibrated with measured Capacitance-Voltage and combining it with TCAD simulations, we show that these anomalous behaviors can be quantitatively explained and interpreted as field-induced permittivity enhancement. The model predicts substantial scaling improvement at the end of the roadmap.

engineering, electrical & electronic,physics, applied
An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Adeel Liaqat,Yiheng Yin,Sabir Hussain,Wen Wen,Juanxia Wu,Yuzheng Guo,Chunhe Dang,Ching-Hwa Ho,Zheng Liu,Peng Yu,Zhihai Cheng,Liming Xie

DOI: https://doi.org/10.1088/1361-6528/ac4063

IF: 3.5

2021-12-24

Nanotechnology

Abstract:Abstract As scaling down the size of metal oxide semiconductor field-effect transistors (FETs), power dissipation has become a major challenge. Lowering down the sub-threshold swing (SS) is known as an effective technique to decrease the operating voltage of FETs and hence lower down the power consumption. However, the Boltzmann distribution of electrons (so-called ‘Boltzmann tyranny’) implements a physical limit to the SS value. Use of negative capacitance (NC) effect has enabled a new path to achieve a low SS below the Boltzmann limit (60 mV dec −1 at room temperature). In this work, we have demonstrated a NC-FET from an all two-dimensional (2D) metal ferroelectric semiconductor (MFS) vertical heterostructure: Graphene/CuInP 2 S 6 /MoS 2 . The negative capacitance from the ferroelectric CuInP 2 S 6 has enabled the breaking of the ‘Boltzmann tyranny’. The heterostructure based device has shown steep slopes switching below 60 mV dec −1 (lowest to < 10 mV dec −1 ) over 3 orders of source-drain current, which provides an avenue for all 2D material based steep slope FETs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Dermatological screening.

E. Emmett

DOI: https://doi.org/10.1097/00043764-198610000-00027

Abstract:Occupational skin diseases are the most frequently reported occupational diseases in the US today. In addition, nonoccupational skin diseases are also prevalent among workers. Dermatological screening examinations may be performed to detect conditions that place the worker at increased risk, so that risk might be reduced; detect early signs of specific occupational diseases; or systematically record cutaneous abnormalities so that increases in prevalence or incidence associated with workplace exposures can be identified. Some of the available dermatological screening methods will be discussed, with attention to ways in which the effectiveness of screening may be enhanced. Conditions for which such procedures may be useful include dermatitis, acne, chloracne, pigmentary changes, melanoma, and nonmelanoma skin cancer. The importance of biological monitoring in relation to cutaneous exposure is also discussed.

The effects of carbon dioxide management on plasma levels of fentanyl and sufentanil during hypothermic cardiopulmonary bypass.

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

On the negative capacitance in ferroelectric heterostructures

Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor

Ferroelectric Negative Capacitance Field Effect Transistor

Graphene-Integrated Negative Quantum Capacitance Field-Effect Transistor With Sub-60-mV/dec Switching

Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors

Sub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric component

Spatially resolved steady-state negative capacitance

NEW UNDERSTANDING OF NEGATIVE CAPACITANCE DEVICES FOR LOW-POWER LOGIC APPLICATIONS

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Dermatological screening.