Abstract:The low-intensity photoionization of individual semiconductor nanocrystals, at 23 degreesC in dry nitrogen, is time-resolved over many hours for both S (532-nm excitation) and P (395-nm excitation) nanocrystal excited states using electrostatic force microscopy. Over 7000 calibrated charge measurements have been made on 14- and 21-Angstrom-thick oxide layers. Photoexcited electrons tunnel across the oxide into the silicon, and multiple charges can build up on individual nanocrystals at intensities of only 0.1-0.01 W/cm(2). The silicon dopant type influences the net nanocrystal charging via the interfacial band bending; P-type subtrates show a faster nanocrystal reneutralization rate due to their higher interfacial electron concentration. There is a huge range of photoionzation behavior for individual nanocrystals. This behavior is different for 395- and 532-nm excitation in the same nanocrystal. This individuality seems in part to reflect tunneling through spatially localized defect states in the oxide. The line widths of spatial charge images of individual nanocrystals and the semicontinuous rate of charge re-neutralization after excitation suggest that we observe trapped electron motion in the adjacent oxide and/or on the nanocrystal surface, in addition to the ionized nanocrystal. On average, tunneling of the excited P electron is faster by 1-2 orders of magnitude than that of the S electron; the data show direct photoionization from the excited P state. A kinetic model is developed, including the effect of charging energy on tunneling rate, and applied to ensemble average behavior. There is no quantitative agreement of the tunneling-rate dependence on oxide thickness and excitation energy with the simple I D effective mass tunneling model. However, overall observed trends are rationalized in light of current thin-oxide tunneling literature.

K-shell X-ray Production in Silicon (Z2 = 14) by (1 ⩽ Z1 ⩽ 53) Slow Ions

Charge State Effect on K-shell Ionization of Silicon Induced by Iodine Q + Ions

K-shell X-Ray of Al Produced by Collisions of Ions with Near Bohr Velocities

Study of Si K-Shell X-Ray Emission Induced by H+ and Ar11+ Ions

Charge State Effect on Si K X-ray Emission Induced by Iq+ions Impacting

Al K-Shell X-Ray Production Cross Section Induced by Proton and Highly Charged Heavy Ions

Soft X-Ray Spectroscopy Of Highly Charged Silicon Ions In Dense Plasmas

Damage production in silicon by MeV Si cluster irradiation

Non-linear characteristics of irradiation damages in silicon by MeV Si clusters

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

Investigation On Collision Of Si2+ With H From Intermediate To High Projectile Energies

Measurement and analysis of K-shell lines of silicon ions in laser plasmas

X-ray Emission from 424-Mev/u C Ions Impacting on Selected Target

Charge-State Dependence of Inner-Shell Processes in Collisions Between Highly Charged Xe Ions and Solids at Intermediate Energies

Studies of the Kα X-ray Spectra of Low-Density SiO2 Aerogel Induced by Ca Projectiles for Different Penetration Depths

The Electron Emission Yield Induced by the Interaction of Highly Charged Argon Ions with Silicon Surface

Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on N- and P-Type Silicon Substrates with Thin Oxides

First measurement of the nuclear-recoil ionization yield in silicon at 100 eV

X-ray Emission for Ar11+ Ions Impacting on Various Targets in the Collisions Near the Bohr Velocity*

X-rays Produced by Interaction of Xe20+ with Different Targets in Bragg Peak Energy Region

Nonlinear Optical Properties of Silicon Nanocrystals Grown by a SiOx/SiO2 Superlattice Approach