Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Positron Annihilation, X-ray and ESR Studies of Iron Ion Implanted Crystals of Potassium Bromide and Quartz

Structural Change in Iron Implanted Potassium Bromide Crystals

Evolution of secondary defects in arsenic implanted Si

Simulated spatial and temporal dependence of chromium concentration in pure Fe and Fe-14%Cr under high dpa ion irradiation

Comparative Study of Radiation Defects in Ion Irradiated Bulk and Thin-Foil Tungsten

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Electron microscopy and optical spectroscopy study of xenon-implanted yttria-stabilized zirconia

Elucidation of Annihilation Processes of Defects Induced by Γ-Irradiation in Li2TiO3

Nanostructure evolution and surface modification mechanism of Cr ion-implanted single-crystal iron: insights from molecular dynamics simulations

Positron And Thermal Desorption Studies On He Ion Implanted Nuclear Graphite

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Revealing nano-scale lattice distortions in implanted material with 3D Bragg ptychography

Elastic Strain Associated with Irradiation-Induced Defects in Self-ion Irradiated Tungsten

Interaction of Irradiation Defects with Precipitates in CuCrZr and Cu-1Fe Alloys

MD simulation study on the microstructural evolution of single-crystal Fe with pre-existing defects by Cr ion implantation

Characterising Ion-Irradiated FeCr: Hardness, Thermal Diffusivity and Lattice Strain

The Effects of Xenon Implantation in Ceria with and Without Lanthanum

Electron Microscopy Study on Irradiation Damage of Xenon-Implanted Yttria-Stabilized Zirconia Single Crystals

Enhancement of Paramagnetic Defects in Yttria Stabilized Zirconia Implanted by Cs Ion Irradiation

200 Kev Xe+ Ions Irradiation Effects on Zr–Ti Binary Films

X-ray induced electron and ion fragmentation dynamics in IBr