Abstract:The arrival of the post-Moore era has become a consensus, and heterogeneous integration technology has become an important technical route for the development of integrated circuits. Heterogeneous integration usually uses a substrate (in many cases, it’s a silicon interposer) to realize the power supply and interconnection between components. As demands for performance and interconnect density continue to increase, decoupling capacitors must be used on interposers to tackle growing EMI issues. Silicon capacitor technology, especially deep trench capacitor (DTC) technology, is well suited for silicon interposer based integration due to advantages of small profile and CMOS process compatibility, etc. However, existing DTC devices still cannot meet the needs of high-performance and high-frequency applications, and there is still a lot of space for improvement in terms of increasing capacitance density and reducing ESR and ESL.In this paper, several DTC technologies are compared, and on the basis of comparative analysis, some effective optimization ideas are summarized. Under the same process conditions, the shape design of the capacitor device can significantly affect the device performance. Therefore, based on the densest-packing principle, a novel deep trench capacitor device with hexagonal design is proposed. Furthermore, a quantitative index to estimate capacitance density of DTC devices with different shape design is set up for design.Finally, the width of trenches is 1μm, and the depth is 15μm. The material of the electrode layer and the dielectric layer is titanium nitride (TiN) and hafnium oxide (HfO2), respectively. The simulation results show that the novel design achieves a capacitance density of up to 1200nF/mm 2 . Under the specific simulation condition, where the equivalent capacitance is around 5nF, ESL is reduced to 5.76pH@10GHz, and ESR is 1.01 ohm. It is worth mentioning that the impedance of the device itself remains stable at about 1 ohm in a fairly wide frequency band from 100MHz to 10GHz. Scaling and applying more advanced manufacturing processes can lead to higher capacitance density and better electrical performance.

Collar Teos Integrity of Deep Trench Dram Capacitor with A Vertical Parasitic Nmosfet

Design and Simulation of Deep Trench Capacitor on High-Performance Silicon Interposer

Integrity of n-type channel surface for nano-node high-k gate dielectric

Probing Active-Area Shift with Improved Kelvin Measurement for Trench DRAM

Dielectric Quality of 3D Capacitor Embedded in Through-Silicon Via (TSV)

Investigation Of Fabricating Ultra Deep And High Aspect Ratio Electrical Isolation Trench Without Void

A New Embedded Measurement Structure for eDRAM Capacitor

A Dynamic Measurement Method for Parasitic Capacitances of High Voltage SiC MOSFETs

Complete DFM Model for High-Performance Computing SoCs with Guard Ring and Dummy Fill Effect

A New Charge-Pumping Measurement Technique for Lateral Profiling of Interface States and Oxide Charges in MOSFETs

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Design, Fabrication and Characterization of TSV Interposer Integrated 3D Capacitor for SIP Applications

Interconnect Capacitance Characterization Based on Charge Based Capacitance Measurement (CBCM) Technique for DFM Applications

Development of Ultra-Low Capacitance Through-Silicon-vias (tsvs) with Air-Gap Liner

Nondestructive Dciv Method to Evaluate Plasma Charging Damage in Ultrathin Gate Oxides

High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling Transistor

A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

The investigation of DARC etch back in DRAM capacitor oxide mask opening

Q-factor Integrity of 28Nm-Node High-k Gate Dielectric

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates