Effect of Annealing Temperature on Resistance Switching Behavior of Bi4ti3o12 Thin Films Deposited on Ito Glass

Bing-Cheng Sun,Hua Wang,Ji-Wen Xu
DOI: https://doi.org/10.4028/www.scientific.net/amr.706-708.82
2013-01-01
Abstract:Nonvolatile of polycrystalline Bi4Ti3O12 thin films prepared by sol-gel method were studied, and the effect of annealing temperature on resistance switching behavior has been studied. The main point is accented on decrease the operation voltage. Two controllable resistance states were observed by applying voltage pulses. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Space Charge Limited Current(SCLC).
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