Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

jun gou,hui ling tai,jun wang,de en gu,xiong bang wei,ya dong jiang
DOI: https://doi.org/10.4028/www.scientific.net/AMR.909.91
2014-01-01
Advanced Materials Research
Abstract:A high - selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOx thin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOx etch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N-2. High - resolution and low - roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOx etch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4 selectivity of 5 and a SiO2 selectivity of 10.
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