Abstract:Al2O3 is one of the most effective dielectric surface passivation layers for silicon solar cells. Instead of a single layer, multilayers offer the possibility to tailor material properties on a nanometer scale. In this study, the effect of various plasma treatments during the deposition of Al2O3/SiO2 multilayers on their surface passivation quality is evaluated. Quite substantial improvements for various plasma treatments compared to Al2O3 is observed. Al2O3 is one of the most effective dielectric surface passivation layers for silicon solar cells, but recent studies indicate that there is still room for improvement. Instead of a single layer, multilayers of only a few nanometers thickness offer the possibility to tailor material properties on a nanometer scale. In this study, the effect of various plasma treatments performed at different stages during the ALD deposition of Al2O3/SiO2 multilayers on the silicon surface passivation quality is evaluated. Significant improvements in surface passivation quality for some plasma treatments are observed, particularly for single Al2O3/SiO2 bilayers treated with a H2 plasma after SiO2 deposition. This treatment resulted in a surface recombination parameter J0 as low as 0.35 fA cm−2 on (100) surfaces of 10 Ω cm n‐type silicon, more than a factor of 5 lower than that of Al2O3 single layers without plasma treatment. Capacitance‐voltage measurements indicate that the improved surface passivation of the plasma‐treated samples results from an enhanced chemical interface passivation rather than an improved field effect. In addition, a superior temperature stability of the surface passivation quality is found for various plasma‐treated multilayers.

Defining a Parameter of Plasma-Enhanced CVD to Characterize the Effect of Silicon-Surface Passivation in Heterojunction Solar Cells

Controllable A-Si:H/c-si Interface Passivation by Residual SiH4 Molecules in H-2 Plasma

Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells

Study on P-a-Si:H properties of N-type heterogeneous junction solar cells manufactured by large-area parallel plate PECVD machine

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Influence of PECVD deposition temperature on phosphorus doped poly-silicon passivating contacts

Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Microstructure Of Hydrogenated Amorphous Silicon Layers Studied By Spectroscopic Ellipsometry For The Surface Passivation In Heterojunction Solar Cells

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Key Issues for High-Efficiency Silicon Thin Film Solar Cells Prepared by RF-PECVD under High-Pressure-depletion Conditions

Importance of Nanocrystallites in A-Si:H Passivation Layer in Improving the Performance of Silicon Heterojunction Solar Cells

Improved Silicon Surface Passivation by ALD Al2O3/SiO2 Multilayers with In‐Situ Plasma Treatments

A Method to Slow Down the Etching of Hydrogen Plasma Pretreatment and Improve Passivation in Silicon Heterojunction Solar Cells

Improved interface passivation by optimizing a polysilicon film under different hydrogen dilution in N-type TOPCon silicon solar cells

Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

Role of Hydrogen in Modifying A-Si:H/c-si Interface Passivation and Band Alignment for Rear-Emitter Silicon Heterojunction Solar Cells

Process Parameter Selection Study on SiNx:H Films by PECVD Method for Silicon Solar Cells

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Improved Surface Passivation by Wet Texturing, Ozone‐Based Cleaning, and Plasma‐Enhanced Chemical Vapor Deposition Processes for High‐Efficiency Silicon Heterojunction Solar Cells