Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterization

Electrical Activity of Frank Partial Dislocations and the Influence of Metallic Impurities in Czochralski-Grown Silicon

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Precipitation of Cu and Fe impurities on dislocations in Czochralski-grown silicon

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Recombination Activity Of Sigma 3 Boundaries In Boron-Doped Multicrystalline Silicon: Influence Of Iron Contamination

The Effect of Shear on Nucleation and Movement of Basal Plane Dislocations in 4H-Sic

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Ebic Study of Fe Precipitation on Bulk Stacking Fault in Czochralski-Grown Silicon

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth

Influence of Metal Impurities on Recombination Activity of Dislocations in Multicrystalline Silicon

The Nature of a Low Angle Grain-Boundary in a Si Bi-Crystal with Added Fe Impurities

Reaction pathway analysis for the conversion of perfect screw basal plane dislocation to threading edge dislocation in 4H-SiC