Abstract:The effects of inversion asymmetry on the anisotropic optical transition in the presence of electric field (Pockels effect) in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells and superlattices are investigated theoretically. Within an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p effective mass Hamiltonian formalism, in which the linear k, ${\mathit{k}}^{3}$, \ensuremath{\epsilon} (strain due to the piezoelectric effect), \ensuremath{\epsilon}k, and Rashba terms are taken into account, we have derived the renormalized effective Hamiltonian for the electron and hole, respectively. The effects of the inversion asymmetry and the hole mixing on the spin-split subband structures and the dependence of optical transition matrix elements on the polarization of incident light are fully presented. The microscopic model clearly shows that the inversion asymmetry is responsible for the Pockels effect. The roles played by the hole mixing in the enhanced quantum well Pockels effect mediated by the electron-hole pairs are shown by our calculations. Thus, we develop a theory with exciton states with eight spin components (due to the broken twofold degeneracy of the electrons) in the quantum well and calculate the excitonic spectra. The symmetry analysis and numerical results indicate that the excitonic anisotropic behavior results from the interference between different spin components of holes, which, owing to the heavy- and light-hole mixing, is enhanced significantly compared with the bulk material, especially for those exciton states whose dominant component does not coincide with its optically active component. Comparison between theory and experiment is discussed.

Band Hybridization Effect in InAs/GaSb Based Quantum Wells

Band Hybridization and Spin-Splitting in Inas/Alsb/Gasb Type Ii and Broken-Gap Quantum Wells

Exchange-Induced Band Hybridization in Inas/Gasb Based Type Ii and Broken-Gap Quantum Well Systems

Effective Well Width Analysis in Quantum Well Struct ures

Effect of Valence-Band Hybridization on the Exciton Spectra in Gaas-Ga1-Xalxas Quantum-Wells

Electric control of inverted gap and hybridization gap in type II InAs/GaSb quantum wells

Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells

Efficient band-structure calculations of strained quantum wells

Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD

Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Band offset measurements of Si1-xGex/Si quantum wells studied by conductance technique

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Giant Spin-Orbit Splitting in Inverted Inas/Gasb Double Quantum Wells

MEASUREMENT OF THE BAND OFFSET IN GexSi1-x/Si SINGLE QUANTUM WELL BY USING SINGLE FREQUENCY ADMITTANCE SPECTROSCOPY

INTERSUBBAND ABSORPTION IN P-Type GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS

Probing the Semiconductor to Semimetal Transition in InAs/GaSb Double Quantum Wells by Magneto-Infrared Spectroscopy

Zeeman Splitting of Excitons in GaAs/AlGaAs Quantum Wells in the Faraday Geometry

Effects of inversion asymmetry on electron energy band structures in GaSb/InAs/GaSb quantum wells