Abstract:Nanometer Ge particle (NGP) embedded Si oxide films were deposited on p-type Si substrates using the rf magnetron sputtering technique with a Ge–SiO2 composite target. The area ratio percentage of the Ge target to the composite target was 5%. These films were annealed in a N2 ambient at 300, 600, 800, or 900 °C for 30 min. By fitting Raman scattering spectra, the average diameters of the NGPs in the films were determined. They increased from 5.4 to 9.5 nm with increasing annealing temperatures from 600 to 900 °C. The photoluminescence (PL) peaks for all NGP embedded Si oxide films annealed at various temperatures are located at almost the same position around 580 nm (2.1 eV), although the average sizes of the NGPs in these films are very different from each other. After γ-ray irradiation, the PL peak intensity increases by a factor of 2.3, with the peak position unchanged. The PL peak position does not show any evident shift when the measurement temperature increases from 10 to 300 K. All experimental facts indicate that light emission originates mainly from the luminescence centers in the SiOx films covering the NGPs rather than from the NGPs. The role of NGPs in the PL process of the films is discussed.

A Study on the Precipitation of Ge-Rich Nanoparticles in A Luminescent (er, Ge) Co-Doped Sio2 Film Sputtered with Ar+O-2 Plasma

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Photoluminescence of Ge Nanoparticles Embedded in Sio2 Glasses Fabricated by A Sol-Gel Method

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Photoluminescence from Nanometer Ge Particle Embedded Si Oxide Films

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Origin of Photoluminescence Peaks in Ge–SiO2 Thin Films

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Electroluminescence from Er-doped GeO 2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part II: Photoluminescence

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

Luminescent Ge Nanocrystallites Embedded In A-Sio2 Films

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

PREPARATION OF nc-Ge EMBEDDED IN SiO2 MATRIX AND OBSERVATION OF VISIBLE PHOTOLUMINESCENCE