Improved LDMOS Performance with Buried Multi-Finger Gates

Dawei Xu,Xinhong Cheng,Yuehui Yu,Zhongjian Wang,Duo Cao,Chao Xia,Linjie Liu,Stefan Trellenkamp,Siegfried Mantl,Qing-Tai Zhao

DOI: https://doi.org/10.1016/j.mee.2014.03.005

IF: 2.3

2014-01-01

Microelectronic Engineering

Abstract:SOI LDMOS with buried multi-finger gates (BFG) is proposed and fabricated. The BFG acts as field plate, modulating the lateral electric field distribution in the drift region (off-state) and enhances the carrier accumulation at the surface of the drift region (on-state). The proposed BFG SOI LDMOS shows a 13.6% increase of breakdown voltage, 24.4% reduction of on-resistance and 14.4% increase of the transconductance compared with the reference SOI LDMOS without BFG. (C) 2014 Elsevier B.V. All rights reserved.