Residual Stress of (pb0.92la0.08)(zr0.52ti0.48)o3films Grown by a Sol–gel Process

Beihai Ma,Shanshan Liu,Sheng Tong,Manoj Narayanan,Rachel E. Koritala,Zhongqiang Hu,Uthamalingam Balachandran

DOI: https://doi.org/10.1088/0964-1726/22/5/055019

IF: 4.1

2013-01-01

Smart Materials and Structures

Abstract:We deposited ferroelectric (Pb0.92La0.08)(Zr0.52Ti0.48)O-3 films of approximate to 0.35 to approximate to 3.1 mu m in thickness on platinized silicon substrates by chemical solution deposition. A dielectric constant of approximate to 1350 and dielectric loss of approximate to 0.04 were measured at room temperature. Hysteresis loop tests revealed that the remanent polarization increases while the coercive field decreases with PLZT film thickness. The residual stress in the PLZT films, as determined by the x-ray diffraction sin(2)psi method, decreased from approximate to 380 to approximate to 200 MPa when the film ;thickness increased from 0.35 to 3.1 mu m. The dependence of the residual stress (sigma) on the PLZT film thickness (t) can be described by an empirical equation, sigma = A(0) exp(-t(2)/lambda(2)), with A(0) approximate to 390 MPa and lambda approximate to 3.8 mu m.