Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

Low Defect Density Bulk Aln Substrates for High Performance Electronics and Optoelectronics

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Characterization of Dislocation Arrays in AlN Single Crystals Grown by PVT

Defect-selective Etching of Bulk AlN Single Crystals in Molten KOH/NaOH Eutectic Alloy

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

Low Density of Threading Dislocations in Aln Grown on Sapphire

Annihilation and Regeneration of Defects in (112̅2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth

Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids

4-inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Growth of Aln Single Crystalline Boules

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

High-Quality AlN Film Grown on Sputtered AlN/Sapphire Via Growth-Mode Modification

Preparation Of Aln Film Grown On Sputter-Deposited And Annealed Aln Buffer Layer Via Hvpe

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy

Low-defect and stress-free AlN(0001) nanoprisms and microrods selectively grown on micro-patterned c -sapphire substrate by plasma-assisted molecular beam epitaxy

Realization of Low Dislocation Density AlN on a Small-Coalescence-area Nano-Patterned Sapphire Substrate