Evolution of (in,ga)2se3 -Cu Rich -In(ga) Rich of CIGS Thin Films
XUE Yu-ming,XU Chuan-ming,ZHANG Li,SUN Yun,WANG Wei,YANG Bao-he
DOI: https://doi.org/10.3321/j.issn:1005-0086.2008.03.017
2008-01-01
Abstract:CIGS thin films were sequentially deposited by three stage co-evaporation technique.The thickness,the composition and the crystal structure of the films were measured by step meter,X-ray fluorescence(XRF) and X-ray diffraction(XRD) respectively.The crsytal phase evolution is Cu(In,Ga)5Se8,Cu(In,Ga)3Se5,Cu2(In,Ga)4Se7(or Cu(In,Ga)2Se3.5) and Cu(In,Ga)Se2(CuxSe) successively from(In,Ga)2Se3 to Cu rich phases.The crsytal phase evolution is Cu(In,Ga)Se2(CuxSe),Cu2(In,Ga)4Se7(or Cu(In,Ga)2Se3.5),Cu(In,Ga)3Se5 and Cu(In,Ga)5Se8 from Cu rich phases to In(Ga) rich phases.At the same time,the growth mechanism and structural properties of thin films were discussed in the two processes.