Forming-free Resistive Switching in a Nanoporous Nitrogen-Doped Carbon Thin Film with Ready-Made Metal Nanofilaments

Hao Chen,Fei Zhuge,Bing Fu,Jun Li,Jun Wang,Weigao Wang,Qin Wang,Le Li,Fagen Li,Haolei Zhang,Lingyan Liang,Hao Luo,Mei Wang,Junhua Gao,Hongtao Cao,Hong Zhang,Zhicheng Li
DOI: https://doi.org/10.1016/j.carbon.2014.04.091
IF: 10.9
2014-01-01
Carbon
Abstract:An amorphous carbon thin film, with through-pores of several tens of nanometers in size, has been synthesized by annealing magnetron sputtered nitrogen-doped carbon thin films at elevated temperature in an inert atmosphere. Based on this nanoporous carbon film, we first report forming-free resistive switching in a two terminal device containing ready-made metal nanofilaments. Such nanoporous carbon-based resistance memory device shows low operation voltages and good endurance and retention performance.
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