Abstract:In this study, earth-abundant thin film Cu2ZnSnSe4 (CZTSe) solar cells were fabricated by the magnetron sputtering of a quaternary compound target. Precursor films were deposited in a designed chemical composition followed by a selenization process under the mixed atmosphere of an active gas, H2Se, and a carrier gas, Ar. Due to the existence of the Se element within the film, a relatively low concentration of H2Se was utilized to mainly crystallize the precursors and also supplement Se. To explore the selenization process, the as-deposited CZTSe absorbers were annealed at different temperatures. The results of X-ray diffraction (XRD) and Raman scattering spectroscopy measurements showed that the CZTSe grains continuously grew after selenization. In this study, when the absorbers were annealed at 575 degrees C, the CZTSe solar cells were obtained with the highest efficiency of 11.95%, with the open circuit voltage (V-OC) of 432.22 mV, short circuit current density (J(SC)) of 36.28 mA cm(-2) and fill factor (FF) of 76.21%. The photoluminescence (PL) spectrum indicates that the peak center underwent a red-shift from the band gap (E-g) of 90 meV. The analyses of fluctuation modules indicate that the electrostatic potential fluctuation is dominant for the band tail. The investigations demonstrate that sputtering of the Cu-Zn-Sn-Se quaternary compound target via the selenization process can be an effective and simple method for the fabrication of high-performance CZTSe solar cells.

Formation of Cu2ZnSnSe4 Through Direct Selenization of Metal Oxides

Preparation and characterization of Cu2ZnSnSe4 thin films by selenization of electrodeposited metal precursors

The Preparation of Cu2ZnSnSe4 Films by Selenization of the Oxide Precursors

Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

Uniform monolayer Cu2ZnSn(S,Se)4 film based on novel precursor solution

Fabrication of highly crystallized Cu 2 SnS 3 thin films through sulfurization of Sn-rich metallic precursors

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

Fabrication of Cu 2 ZnSnS 4 thin films using oxides nanoparticles ink for solar cell

Nanoparticle Based Preparation Method of Cu_2ZnSn(SSe)_4 Thin Films

Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

Cu2ZnSnSSe4 Solar Cells with 9.6% Efficiency Via Selenizing Cu-Zn-Sn-S Precursor Sputtered from a Quaternary Target

Benign solution processed Cu2ZnSn(Se, S)4 photovoltaic

Low Cost Preparation of Cu2ZnSnS4 and Cu2ZnSn(SxSe1−x)4 from Binary Sulfide Nanoparticles for Solar Cell Application

The Cu 2ZnSnSe 4 thin films solar cells synthesized by electrodeposition route

Fabrication of Cu2ZnSn(S,Se)4 absorber films by selenization of different Cu2ZnSnS4 nanocrystal coatings

Preparing Cu2ZnSnSe4 thin film solar cells based on selenium containing precursors

Fabrication of Cu2ZnSnS4 Thin Films Through Sulfurization of Co-Electrodeposited Cu-Zn-Sn Metallic Precursor

An in Situ Fabrication of Rapid Grown Copper Selenide Film with Improved Mechanical Properties

Selenization of mixed metal oxides for dense and ZnSe-free Cu2ZnSnSe4 absorber films

Formation Pathway of Wurtzite-like Cu2ZnSnSe4 Nanocrystals

Thin-Film Solar Cells Based on Selenized CuSbS2 Absorber