Formation Pathway of Wurtzite-like Cu2ZnSnSe4 Nanocrystals

Bryce A Tappan,Kyle D Crans,Richard L Brutchey

DOI: https://doi.org/10.1021/acs.inorgchem.1c02506

2021-11-15

Abstract:Cu2ZnSnSe4 is a direct band gap semiconductor composed of earth-abundant elements, making it an attractive material for thin-film photovoltaic technologies. Cu2ZnSnSe4 crystallizes in the kesterite structure type as a bulk material, but it can also crystallize in a metastable wurtzite-like crystal structure when synthesized on the nanoscale. The wurtzite-like polymorph introduces unique and useful properties to Cu2ZnSnSe4 materials, including widely tunable band gaps and superior compositional flexibility as compared to kesterite Cu2ZnSnSe4. Here, we investigate the formation pathway of colloidally prepared wurtzite-like Cu2ZnSnSe4 nanocrystals. We show that this quaternary material forms through a chain of reactions, starting with binary Cu3Se2 nanocrystals that, due to both kinetic and thermodynamic reasons, preferentially react with tin to yield hexagonal copper tin selenide intermediates. These ternary intermediates then react with zinc to form the resulting wurtzite-like Cu2ZnSnSe4 nanocrystals. Based on this formation pathway, we suggest synthetic methods that may prevent the formation of unwanted impurity phases that are known to hamper the efficiency of Cu2ZnSnSe4-based optoelectronic devices.