Abstract:Sulfurization with various atmosphere and postheat treatments has been reported for earth abundant kesterite Cu2ZnSnS4 (CZTS) preparation as cost‐effective material for next‐generation solar cells. A full understanding of the nanoscale microstructure and chemistry of CZTS/CdS interface obtained from these different fabrication routes is currently lacking, yet is critical to developing optimal processing routes for high‐performance kesterite solar cells. Here, the first detailed investigation of the interfacial microstructure and chemistry of CdS/Cu2ZnSnS4 heterojunctions is presented. For CZTS obtained from sulfurization in a sulfur‐only atmosphere where highly defective surfaces are present, air annealing followed by etching in the initial stage of chemical bath deposition (CBD) process can effectively eliminate interfacial defects and allow the epitaxial growth of CBD‐CdS, improving the minority lifetime, open circuit voltage (VOC), and fill factor (FF) of the devices, while blocking Cd diffusion and deteriorating short circuit current (Jsc). For CZTS from sulfurization in a combined sulfur and SnS atmosphere where CBD‐CdS can directly epitaxially grow on CZTS and Cd‐diffusion is clearly observed, associated devices show the longest lifetime and the highest efficiency of 8.76%. Epitaxial growth of CdS and Cd diffusion into CZTS are found to be two crucial features minimizing interfacial recombination and achieving high‐efficiency devices. This will not only enhance the understanding of the device structure and physics of kesterite based solar cells, but also provide an effective way for designing other chalcogenide heterojunction solar cells.

Formation Mechanism of ZnS Impurities and Their Effect on Photoelectrochemical Properties on a Cu2ZnSnS4 Photocathode

Investigation of Cu2ZnSnS4 Thin Films with Controllable Cu Composition and Its Influence on Photovoltaic Properties for Solar Cells

Transmission Electron Microscopy Analysis for the Process of Crystallization of $\text{c}{{\text{u}}_{2}}\text{znsn}{{\text{s}}_{4}}$ Film from Sputtered Zn/CuSn Precursor

Synthesis and Characterization of Cu 2 ZnSnS 4 from Cu 2 SnS 3 and ZnS Compounds

Photocurrent Improvement in Nanocrystalline Cu2ZnSnS4 Photocathodes by Introducing Porous Structures

Nanoscale Microstructure and Chemistry of Cu2znsns4/Cds Interface in Kesterite Cu2znsns4 Solar Cells

Kesterite Cu2ZnSnS4 Solar Cell from Sputtered Zn/(Cu & Sn) Metal Stack Precursors

Preparation And Characterization Of Cu2znsns4 Thin Films And Solar Cells Fabricated From Quaternary Cu-Zn-Sn-S Target

Fabrication and Characterization of Cu2znsns4 Thin Films for Photovoltaic Application by Low-Cost Single Target Sputtering Process

Influence of Sulfurization Pressure on Cu2ZnSnS4 Thin Films and Solar Cells Prepared by Sulfurization of Metallic Precursors

Self-assembled Nanometer-Scale ZnS Structure at the CZTS/ZnCdS Heterointerface for High-Efficiency Wide Band Gap Cu2ZnSnS4 Solar Cells

Mechanism on the Modified Sulfurization Process for Growing Large-Grained Cu2ZnSnS4 Thin Films

Optical and Electrical Properties of Uniform Non-Toxic Cu2ZnSnS4 Nanocrystal and Its Application in Solar Cells

On The Formation Of Cd-Zn Sulfide Photocatalysts From Insoluble Hydroxide Precursors

Phase-controlled synthesis of Cu2ZnSnS4 nanocrystals: the role of reactivity between Zn and S.

Cu 2 ZnSnS 4 thin film solar cell fabricated by magnetron sputtering and sulfurization

Synthesis and characterization of CZTS and Cu2-xAgxZnSnS4 thin films for the application of solar cells

Influence of sulfur partial pressure on the structural performance of Cu2ZnSnS4 solar cells

Characterization of a Cu2ZnSnS4solar Cell Fabricated by Sulfurization of Metallic Precursor Mo/Zn/Cu/Sn

Fabrication of Cu 2 ZnSnS 4 absorber layers with adjustable Zn/Sn and Cu/Zn+Sn ratios

Understanding the Key Factors of Enhancing Phase and Compositional Controllability for 6% Efficient Pure-Sulfide Cu2znsns4 Solar Cells Prepared from Quaternary Wurtzite Nanocrystals