Abstract:We present the detailed dc and radio-frequency characteristics of an $\hbox{Al}_{0.3}\hbox{Ga}_{0.7}\hbox{N/GaN/In}_{0.1}\hbox{Ga}_{0.9}\hbox{N/GaN}$ double-heterojunction HEMT (DH-HEMT) structure. This structure incorporates a thin (3 nm) $\hbox{In}_{0.1}\hbox{Ga}_{0.9}\hbox{N}$ notch layer inserted at a location that is 6-nm away from the AlGaN/GaN heterointerface. The $\hbox{In}_{0.1}\hbox{Ga}_{0.9}\hbox{N}$ layer provides a unique piezoelectric polarization field which results in a higher potential barrier at the backside of the two-dimensional electron gas channel, effectively improving the carrier confinement and then reducing the buffer leakage. Both depletion-mode (D-mode) and enhancement-mode (E-mode) devices were fabricated on this new structure. Compared with the baseline AlGaN/GaN HEMTs, the DH-HEMT shows lower drain leakage current. The gate leakage current is also found to be reduced, owing to an improved surface morphology in InGaN-incorporated epitaxial structures. DC and small- and large-signal microwave characteristics, together with the linearity performances, have been investigated. The channel transit delay time analysis also revealed that there was a minor channel in the InGaN layer in which the electrons exhibited a mobility slightly lower than the GaN channel. The E-mode DH-HEMTs were also fabricated using our recently developed $\hbox{CF}_{4}$-based plasma treatment technique. The large-signal operation of the E-mode GaN-based HEMTs was reported for the first time. At 2 GHz, a $\hbox{1} \times \hbox{100}\ \mu\hbox{m}$ E-mode device demonstrated a maximum output power of 3.12 W/mm and a power-added efficiency of 49% with single-polarity biases (a gate bias of $+$0.5 V and a drain bias of 35 V). An output third-order interception point of 34.7 dBm was obtained in the E-mode HEMTs.

A Planar Integration Process For E/D-Mode Algan/Gan Hemt Dcfl Integrated Circuits

Planar Integration of E/D-mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode Algan/Gan High Electron Mobility Transistors

Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using $hboxcf_4$ Plasma Treatment

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring

Temperature Dependence and Thermal Stability of Planar-Integrated Enhancement/Depletion-Mode Algan/Gan Hemts and Digital Circuits

Monolithic Integration of Enhancement/depletion-Mode High Electron Mobility Transistors Using Hydrogen Plasma Treatment

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

High-performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Self-aligned Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Enhancement-Mode Algan/Gan Hemts Fabricated by Standard Fluorine Ion Implantation with A Si3n4 Energy-Absorbing Layer

High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

Enhancement-mode AlGaN/GaN HEMTs on Silicon Substrate

Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs with AlN/SiN Bilayer Dielectric

A novel AlGaN/GaN HEMTs technology for intelligent electric network application

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs

Control of Threshold Voltage of Algan/Gan Hemts by Fluoride-Based Plasma Treatment: from Depletion Mode to Enhancement Mode

Integration of Enhancement and Depletion‐mode AlGaN/GaN MIS‐HFETs by Fluoride‐based Plasma Treatment

Monolithic Integration of InGaP/AlGaAs/InGaAs Enhancement/Depletion-Mode PHEMTs