Abstract:Fabrication and characterization of AlGaN/GaN HEMT inverters and ring oscillators utilizing integrated en- hancement/depletion-mode (E/D-mode) AlGaN/GaN HEMTs are presented. The core technique is a CF4 plasma treatment that can effectively convert a D-mode AlGaN/GaN heterostructure to an E-mode heterostructure. A significant advantage of the plasma-treated E-mode HEMTs is that the gate current is reduced in both reverse- and forward-bias regions due to the effectively enhanced barrier height induced by the negatively charged fluo- rine ions in the AlGaN barrier. As a result, the input voltage swing is expanded by about 1 V for the E-mode HEMT, enabling conve- nient input/output logic level matching for multistage logic circuits such as ring oscillators. The fabricated 17-stage direct-coupled field-effect transistor logic ring oscillator using the 1-µm-gate technology can operate properly at a larger supply voltage of 3.5 V, and a minimum propagation delay of 130 ps/stage is achieved. Index Terms—AlGaN/GaN, depletion mode (D-mode), direct- coupled field-effect transistor (FET) logic (DCFL), enhance- ment/depletion (E/D) inverter, enhancement mode (E-mode), fluorine ions, gate current, HEMT, plasma treatment, post-gate rapid thermal annealing (RTA), ring oscillator.

Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode Algan/Gan High Electron Mobility Transistors

Planar Integration of E/D-mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

A Planar Integration Process For E/D-Mode Algan/Gan Hemt Dcfl Integrated Circuits

Monolithic Integration of Enhancement/depletion-Mode High Electron Mobility Transistors Using Hydrogen Plasma Treatment

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using $hboxcf_4$ Plasma Treatment

Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits

Temperature Dependence and Thermal Stability of Planar-Integrated Enhancement/Depletion-Mode Algan/Gan Hemts and Digital Circuits

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring

Integration of Enhancement and Depletion‐mode AlGaN/GaN MIS‐HFETs by Fluoride‐based Plasma Treatment

Control of Threshold Voltage of Algan/Gan Hemts by Fluoride-Based Plasma Treatment: from Depletion Mode to Enhancement Mode

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

High-performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Self-aligned Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

Enhancement-mode AlGaN/GaN HEMTs on Silicon Substrate

Improving Gate Reliability of 6-in E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

Enhancement-Mode Algan/Gan Hemts Fabricated by Standard Fluorine Ion Implantation with A Si3n4 Energy-Absorbing Layer

Inaln/Gan Heterostructure Field-Effect Transistors on Fe-Doped Semi-Insulating Gan Substrates

Normally-Off P-Gan/Algan/Gan High Electron Mobility Transistors Using Hydrogen Plasma Treatment