Abstract:With the evolution of the modern world, the demand for broadband network systems has been gradually grabbing significant attention in the high-tech industry. To meet the future requirements of intelligent life, unmanned devices and vehicles, the standard of six-generation (6G) wireless system is developing to integrate superior functions of low-orbit satellites and 5G cellular communication systems. For 6G wireless technology, the wide bandgap and high-electron-mobility transistors of GaN/AlGaN/GaN (HEMTs) are emerging as excellent candidates due to their high-power-handling capabilities and ability to small-scale fabrication to obtain minor and affordable chip size. However, the conventional GaN/AlGaN/GaN HEMTs, such as depletion-mode transistors with a negative threshold voltage (Vth), can limit the device application and their stability against temperature. Therefore, it is crucial to convert the gate-controlled channel from depletion- to enhancement mode, which can be achieved by introducing fluorine atoms into the channel. Herein, this study presents a method that can accurately control threshold voltages of GaN/AlGaN/GaN using monolayer doping with 1H,1H,2H,2H-Perfluorooctyltriethoxysilane (POTS), a fluoride-containing molecule. This technique can prevent lattice damage from conventional methods such as ion implantation or plasma. This can open more process possibilities for next-generation high mobility GaN/AlGaN/GaN FinFETS to serve future-related 6G communication and low-orbit satellite circuit development.Graphical Abstract

Control of Threshold Voltage of Algan/Gan Hemts by Fluoride-Based Plasma Treatment: from Depletion Mode to Enhancement Mode

High-performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Integration of Enhancement and Depletion‐mode AlGaN/GaN MIS‐HFETs by Fluoride‐based Plasma Treatment

Self-aligned Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Fluorine-plasma Surface Treatment for Gate Forward Leakage Current Reduction in AlGaN/GaN HEMTs

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage

Threshold Voltage Modulation Mechanism of AlGaN/GaN Metal-Insulator-semiconductor High-Electron Mobility Transistors with Fluorinated Al2O3 As Gate Dielectrics

Enhancement-Mode Algan/Gan Hemts Fabricated by Standard Fluorine Ion Implantation with A Si3n4 Energy-Absorbing Layer

Fluoride monolayer doping in GaN/AlGaN/GaN semiconductor

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

Planar Integration of E/D-mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode Algan/Gan High Electron Mobility Transistors

Enhancement Mode AlGaN/GaN HEMTs by Fluorine Ion Thermal Diffusion with High V Th Stability

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Enhancement-Mode GaN-Based Power Devices Fabricated by Using Standard Fluorine Ion Implantation

Analysis and Reduction of the Gate Forward Leakage Current in AlGaN/GaN HEMTs Employing Energy-Band Modulation Technology

Gate Leakage Mechanisms of the AlGaN/GaN HEMT with Fluorinated Graphene Passivation

Improving Gate Reliability of 6-in E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

The Modulation Effects of Charged Dielectric Thin Films on Two-Dimensional Electron Gas in Algan/Gan Heterostructure