Enhancement Mode AlGaN/GaN HEMTs by Fluorine Ion Thermal Diffusion with High V Th Stability

Feiyu Shen,Ronghui Hao,Liang Song,Fu Chen,Guohao Yu,Xiaodong Zhang,Yaming Fan,Fujiang Lin,Yong Cai,Baoshun Zhang

DOI: https://doi.org/10.7567/1882-0786/ab1cfa

IF: 2.819

2019-01-01

Applied Physics Express

Abstract:A method of fluorine ion thermal diffusion has been proposed to realize enhancement-mode AIGaN/GaN HEMTs. By AIF(3) solid diffusion source, fluorine ion has successfully diffused in the gate region of AIGaN layer at 800 degrees C 2 h with a diffusion depth about 20 nm demonstrated by secondary ion mass spectrometry. The fabricated device exhibits a positive threshold voltage of 1.8 V, a drain current density of 95 mA mm(-1) at V-g = 4 V, a peak transconductance of 50 mS mm(-1), a breakdown voltage of 700 V. Besides, the device is also demonstrated with good V-th stability under different stress conditions. (C) 2019 The Japan Society of Applied Physics