Development of Enhancement-Mode GaN P-Fet with Post-Etch Wet Treatment on P-Gan Gate HEMT Epi-Wafer
Teng Li,Meng Zhang,Jingjing Yu,Jiawei Cui,Junjie Yang,Yanlin Wu,Han Yang,Yamin Zhang,Xuelin Yang,Maojun Wang,Shiwei Feng,Bo Shen,Jin Wei
DOI: https://doi.org/10.1109/ted.2024.3365676
IF: 3.1
2024-01-01
IEEE Transactions on Electron Devices
Abstract:Developing E-mode p-channel field-effect transistors (p-FETs) on the standard p-GaN gate HEMT epi-wafer is highly motivated to facilitate the realization of gallium nitride (GaN) complementary logic (CL) circuits and power-integrated circuits (PICs). The gate etching process is commonly employed in the fabrication of E-mode GaNp-FETs. However, due to gate etching-induced damage, the performance of E-mode GaN p-FETs often fails to meet expectations. To address the above issue, a post-etch wettreatment technique was developed in this work to enhance the performance of E-mode GaN p-FETs. The fabricated GaN p-FET with LG=2 mu m exhibits an E-mode operation with Vth= -2.9 V. The p-FET with post-etch wet treatment exhibits a current density of 5.4 mA/mm. Compared to the p-FET without wet treatment (1.9 mA/mm), the current density has increased by more than double. Atomic force microscopy (AFM) was utilized to characterize the surface morphology and validate the effectiveness of post-etch wet treatment. To suppress the leakage current, multienergy fluorine ion implantation was implemented for planar isolation of GaN p-FETs, highION/IOFFwith over 6x105wasobtained.