Abstract:An effective in situ H2/N2 pretreatment technique for enhancement-mode GaN MISFET with a PEALD AlN/LPCVD SiNx Dual Gate Dielectric is presented. This technique features in situ H2 (15%)/N2 (85%) plasma pretreatment prior to AlN deposition. By using in situ H2 (15%)/N2 (85%) plasma pretreatment and a PEALD AlN protection layer, combined with an LPCVD SiNx gate dielectric, the quality of the AlN/GaN interface can be further improved due to the reduced interface trap densities between the AlN/GaN interface. The interface protection technique enables the successful integration of a high-quality PEALD AlN/LPCVD SiNx gate dielectric in an E-mode GaN MISFET with high performance, high stability, and high reliability. The fabricated enhancement-mode GaN MISFET exhibits a high gate swing and high channel effective mobility of 187.5 cm2/Vs, a threshold voltage of 2.9 V defined at 1 µA/mm, an on/off current ratio of 108, and a breakdown voltage of 1760 V defined at ID = 10 μm/mm. Our experiments showed a significant reduction in dynamic ON resistance and the suppression of current collapse when using the enhancement-mode GaN MISFET with PEALD AlN/LPCVD SiNx under high drain bias switching conditions, especially when the VDS is greater than the 60 V drain bias switch operating state.

Integration of Enhancement and Depletion‐mode AlGaN/GaN MIS‐HFETs by Fluoride‐based Plasma Treatment

Enhancement-Mode Si3N4/AlGaN/GaN MISHFETs

Enhancement-Mode $hboxsi_3hboxn_4hbox/algan/gan$ MISHFETs

Planar Integration of E/D-mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Control of Threshold Voltage of Algan/Gan Hemts by Fluoride-Based Plasma Treatment: from Depletion Mode to Enhancement Mode

Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode Algan/Gan High Electron Mobility Transistors

Enhancement-Mode Algan/Gan Hemts Fabricated by Standard Fluorine Ion Implantation with A Si3n4 Energy-Absorbing Layer

Fabrication of enhancement-mode AlGaN/GaN MISHEMTs by using fluorinated Al2O3 as gate dielectrics

Improved Performance of Enhancement-Mode GaN MIS-FET Based on a Self-Terminating Gate Recess Etching Technique with in Situ NH3 Pre-Treatment

Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN<sub>x</sub> GaN MISFET with In Situ H<sub>2</sub>/N<sub>2</sub> Plasma Pretreatment

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si 3 N 4 Gate Dielectric and Standard Fluorine Ion Implantation

High Performance Enhancement-Mode Algan/Gan Mis-Hemt with Selective Fluorine Treatment

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si<sub>3</sub>N<sub>4</sub> Gate Dielectric and Standard Fluorine Ion Implantation

Enhancement-Mode GaN-Based Power Devices Fabricated by Using Standard Fluorine Ion Implantation

High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer

Improved Performance of Fully-Recessed Normally-off LPCVD SiN/GaN MISFET Using N2O Plasma Pretreatment

Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits

High-performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Improving Gate Reliability of 6-in E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

Threshold Voltage Modulation Mechanism of AlGaN/GaN Metal-Insulator-semiconductor High-Electron Mobility Transistors with Fluorinated Al2O3 As Gate Dielectrics

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation