Abstract:In this study, we report a novel approach for achieving high-performance enhancement mode (E-mode) InAlN/GaN MOS HEMTs based on the fluorine treatment and a p-type NiOx gate (F-NiO HEMT). The NiO film was deposited at different substrate temperatures using reactive sputtering in a varied mixture of O2 and Ar. We show that the threshold voltage ) is effectively modulated by comprehensively optimizing fluorine ion implantation and NiO sputtering conditions without requiring gate recess etching. The influence of different NiO deposition conditions on electrical properties and the critical interface of NiOx/InAlN have been investigated in detail. The proposed E-mode F-NiO HEMT exhibits superior on-state characteristics, including more positive , enhanced gate voltage swing, larger transconductance and also superior gate control over the channel. The dual C-V and pulsed mode measurements confirm the excellent NiOx/AlInN interface and effective suppression of current collapse. We propose a model to explain the contrasting temperature-dependent coefficients of shifts observed in pure fluorine ion-implanted and NiO-based devices. The underlying mechanisms at elevated temperatures are also analyzed.

Fabrication of enhancement-mode AlGaN/GaN MISHEMTs by using fluorinated Al2O3 as gate dielectrics

Enhancement-Mode Algan/Gan Hemts Fabricated by Standard Fluorine Ion Implantation with A Si3n4 Energy-Absorbing Layer

Threshold Voltage Modulation Mechanism of AlGaN/GaN Metal-Insulator-semiconductor High-Electron Mobility Transistors with Fluorinated Al2O3 As Gate Dielectrics

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si 3 N 4 Gate Dielectric and Standard Fluorine Ion Implantation

Enhancement-Mode GaN-Based Power Devices Fabricated by Using Standard Fluorine Ion Implantation

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si<sub>3</sub>N<sub>4</sub> Gate Dielectric and Standard Fluorine Ion Implantation

High Performance Enhancement-Mode Algan/Gan Mis-Hemt with Selective Fluorine Treatment

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

High-performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Self-aligned Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment

Enhancement Mode AlGaN/GaN HEMTs by Fluorine Ion Thermal Diffusion with High V Th Stability

The Modulation Effects of Charged Dielectric Thin Films on Two-Dimensional Electron Gas in Algan/Gan Heterostructure

Improving Gate Reliability of 6-in E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

Structure And Electrical Characteristics Of Algan/Gan Mishfet With Al2o3 Thin Film As Both Surface Passivation And Gate Dielectric

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage

Enhancement-Mode Si3N4/AlGaN/GaN MISHFETs

Integration of Enhancement and Depletion‐mode AlGaN/GaN MIS‐HFETs by Fluoride‐based Plasma Treatment

Enhancement-mode AlGaN/GaN HEMTs on Silicon Substrate

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator