Abstract:With the continuous improvement of the power density and operating frequency in power conversion systems, it is necessary to develop the new power electronic products with better performances than the conventional semiconductors. As a typical representative of the wide-bandgap semiconductors, gallium nitride (GaN)-based heterostructure has unique high-density two-dimensional electron gas (2DEG) and hence can be used to fabricate the fast high electron mobility transistors (HEMTs) with low power loss. Therefore, they are considered as a promising candidate for the next-generation power devices to improve the switching efficiency and speed. Compared with the depletion mode (D-mode, also known as normally-on) devices, the enhancement-mode (E-mode, also known as normally-off) devices have the advantages of safety, energy-saving, and better circuit topology design, making them more attractive for industry applications. In this paper, the different structure schemes and fabrication technologies of the GaN-based E-mode HEMTs are reviewed and summarized. Their technical characteristics are systematically compared. The influences of material epitaxial structure, ohmic contact, material etching, field plate design, and passivation process on the device performances are discussed in detail wherein the fabrication process of the recessed-gate MIS-HEMTs are emphatically illustrated, focusing on the interface treatment technology and dielectric engineering. In addition, the complicated reliability issues and physical mechanisms in the E-mode HEMTs induced by high temperature, high voltage, and high frequency switching are introduced and discussed. Finally, the potential technical solutions are proposed and the future application fields of GaN-based E-mode HEMTs are prospected.

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using $hboxcf_4$ Plasma Treatment

Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits

A Planar Integration Process For E/D-Mode Algan/Gan Hemt Dcfl Integrated Circuits

Planar Integration of E/D-mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Monolithic Integration of Enhancement/depletion-Mode High Electron Mobility Transistors Using Hydrogen Plasma Treatment

Monolithically Integrated Logic Circuits Based on P-Nio Gated E-mode GaN HEMTs

Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode Algan/Gan High Electron Mobility Transistors

Self-aligned Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

High-performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs with AlN/SiN Bilayer Dielectric

Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage

Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters

Enhancement-Mode GaN-Based Power Devices Fabricated by Using Standard Fluorine Ion Implantation

Progress of GaN-Based E-mode HEMTs

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology