Silver Metallization with Reactively Sputtered TiN Diffusion Barrier Films

Gao L.,Gstottner J.,Emling R.,Linsmeier Ch.,Balden M.,Wiltner A.,Hansch W.,Schmitt-Landsiedel D.
DOI: https://doi.org/10.1557/proc-812-f8.3
2020-01-01
Abstract:The physical and electrical properties as well as thermal stability of reactively sputtered titanium nitride (TiN) film serving as a diffusion barrier was studied for silver (Ag) metallization. The thermal stability of Ag/TiN metallizations on Si with 19-nm-thick TiN barriers, as-deposited and after annealing at 300–650°C in N2/H2 for 30 min, was investigated with sheet resistance measurement, X-ray diffraction, focused ion beam-scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. According to electrical measurement no change of sheet resistance was found after annealing at 600°C, but an abrupt rise appeared at 65 0°C annealing. There are two causes by which the Ag/TiN/Si structure became degraded. One is agglomeration of the silver layer, and the other is oxidation and diffusion which are also associated problems during thermal annealing.
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