Silver metal organic chemical vapor deposition for advanced silver metallization

L. Gao,P. Härter,Ch. Linsmeier,A. Wiltner,R. Emling,D. Schmitt-Landsiedel
DOI: https://doi.org/10.1016/j.mee.2005.07.078
IF: 2.3
2005-01-01
Microelectronic Engineering
Abstract:The use of silver interconnects enables higher speed for silicon integrated circuits. The formation of Ag interconnects requires sequential deposition of a continuous barrier layer followed by silver deposition and chemical-mechanical polishing (CMP). In this article, various organometallic precursors (hfac)Ag(1,5-COD), (fod)Ag(PEt"3) and (hfac)Ag(VTES) for the metal organic chemical vapor deposition (MOCVD) of silver on a TiN adhesion layer were evaluated and their deposition characteristics was studied. It was confirmed that Ag could be deposited at a substrate temperature as low as 180^oC with (hfac)Ag(VTES). The silver thin film was deposited at a precursor vaporization temperature of 50^oC and a substrate temperature of 220-250^oC, resulting in Ag film with resistivity around 1.8-2.0@m@Wcm.
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