Abstract:This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure of N2 gas, ion energy (Ei) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature (300 K). At the optimum partial pressure of N2 gas, samples were prepared with or without Ti interface at Ei = 1.0 or 0.5 keV. They were characterized using x-ray reflectivity (XRR) to deduce thickness, roughness and density. The roughness of TiN thin films was found to be below 1 nm, when deposited at the lower Ei of 0.5 keV and when interfaced with a layer of Ti. Under these conditions, the density of TiN sample reaches to 5.80(<math>±</math>0.03) g cm−3, a value highest hitherto for any TiN sample. X-ray diffraction and electrical resistivity measurements were performed. It was found that the cumulative effect of the reduction in Ei from 1.0 to 0.5 keV and the addition of Ti interface favors (111) oriented growth leading to dense and smooth TiN films and a substantial reduction in the electrical resistivity. The reduction in Ei has been attributed to the surface kinetics mechanism (simulated using SRIM) where the available energy of the sputtered species (<math><</math>Esp>) leaving the target at Ei = 0.5 keV is the optimum value favoring the growth of defects free homogeneously distributed films. Secondary ion mass spectroscopy depth profile measurements confirm the uniform distribution of N and Ti across the depth of a sample. The electronic structure of samples was probed using N K-edge and Ti L-edge absorption spectroscopy and the information about the crystal field and spin-orbit splitting confirmed TiN phase formation. In essence, through this work, we demonstrate the role of <math><</math>Esp> and Ti interface in achieving highly dense and smooth TiN thin films with low resistivity without the need of a high temperature or substrate biasing during the thin film deposition process.

Investigation of reactively sputtered TiN films for diffusion barriers

Properties of TiN films deposited by atomic layer deposition for through silicon via applications

Study of optical and electrical properties of TiN thin films prepared by cathodic ion sputtering

Improved TiN film as a diffusion barrier between copper and silicon

Influence of Substrate Bias on Properties of TiN Films with X-ray Photoelectron Spectroscopy and Atomic Force Microscopy Studies

Atomic Layer Deposition Tin Barrier Layers For Through Silicon Via Applications

Structural and Hydrophilic Properties of TiN Films Prepared by Ultrasonic Atomization Assisted Spray Method under Low Temperature

Nitrogen-Rich Titanium Nitride Serving As Pt-Al Diffusion Barrier For Feram Application

Composition and Texture of TiN Thin Films Fabricated by ECR Enhanced Sputtering Deposition

Microstructure, residual stress, and fracture of sputtered TiN films

Electrical and Mechanical Characterization of Chemical Vapor Deposition of Tungsten on Sputter-Deposited TiN Layers

Amorphous-like TiN Films as Barrier Layers for Copper

Mechanical properties of TiN thin film coatings on 304 stainless steel substrates

Evolution of chemical, structural, and mechanical properties of titanium nitride thin films deposited under different nitrogen partial pressure

Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications

Sputtered Ru–Ti, Ru–N and Ru–Ti–N Films As Cu Diffusion Barrier

Structure, Composition and Mechanical Properties of Reactively Sputtered (tivcrtaw)nx High-Entropy Films

Synthesis and study of highly dense and smooth TiN thin films

Microstructural and Electrical Resistivity of TiN Electrode Films Prepared by Direct Current (DC) Reactive Magnetron Sputtering

Superconducting TiN Films Sputtered Over a Large Range of Substrate DC Bias

The microstructure and mechanical properties of Ti(CoCr)N films produced by DC magnetron sputtering