Nitrogen-Rich Titanium Nitride Serving As Pt-Al Diffusion Barrier For Feram Application

Kan-Hao Xue,Tian-Ling Ren,Dan Xie,Ze Jia,Ming-Ming Zhang,Li-Tian Liu
DOI: https://doi.org/10.1080/10584580802074025
2008-01-01
Integrated Ferroelectrics
Abstract:Nitrogen-rich titanium nitride thin films are prepared by reactive sputtering using a Ti target. Distinctively, there is only N-2 introduced in the reaction chamber. The obtained thin films show (111) and (200) peaks of titanium nitride, with a titanium to nitrogen ratio of 1:1.8. When applied into Pt-Al interface, such a nitrogen-rich titanium nitride layer has prevented the diffusion of Al into Pt during 450 degrees C forming gas annealing. The contact resistance of Al/TiNx/Pt multi-structure is low enough for integrated circuit applications. While the fabrication technique of nitrogen-rich titanium nitride is simple, it still serves as a good diffusion barrier.
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