Abstract:The electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au (30 nm/100 nm/30 nm/30 nm) multilayer Ohmic contacts to n-GaN (doping level 5×1017 cm−3) were studied. The lowest contact resistivity derived from the annealed contact was ρS=3.0×10−6Ω cm2. The contacts were robust and showed high-thermal stability. X-ray diffraction and Auger electron spectroscopy studies were made to investigate the microstructure of the annealed contacts. The key to the success of the contact was the Ti layers placed on both sides of the Al layer. Upon annealing, there occurred both in-diffusion and out-diffusion of the Ti layer in intimate contact with the GaN film. The in-diffusion of this led to the formation of TiN, while the out-diffusion of this led to the formation of Ti–Al alloys. The second Ti layer also in-diffused and out-diffused during annealing. However, due to the presence of Au, the out-diffusion was marginalized, and the in-diffusion was higher than the out-diffusion. The in-diffusion led to the formation of Ti–Al alloys with the remaining Al content. Consequently, both the Al and the Ti (from the second Ti layer) contents were almost fully consumed, and none of them were left to appear on the contact surface to form oxides.

Influence of the Pt Barrier on Ti/Al/Pt/Au Ohmic Contacts to N-Gan Studied by Rutherford Backscattering Spectrometry and X-Ray Diffraction

Investigation On The Different Barrier Effect Of Ni And Pt In The Ti/Al/Pt/Au And Ti/Al/Ni/Au Contacts To N-Type Gan

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Thermal annealing behaviour of Pt on n-GaN Schottky contacts

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN

Ohmic Contact Mechanism of Ni/Au Contact to P-Type Gan Studied by Rutherford Backscattering Spectrometry

Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN

High Temperature Induced Failure in Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN Heterostructure

Metal/n-AlGaN Ohmic Contact

Ti/Al/Ni/Au and Ti/Al/Pt/Au Multi-Layer Ohmic Contacts on AlxGa1-xN/GaN Heterostructures

Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN

Ohmic Contact Formation of Ti/Al/Ni/Au to N-Gan by Two-Step Annealing Method

Temperature Dependent Diffusion and Epitaxial Behavior of Oxidized Au/Ni/P-Gan Ohmic Contact

Temperature Dependent Characteristics of Ti/Al/Ni/Au Ohmic Contact on Lattice-Matched In0.17Al0.83N/GaN Heterostructures

Low Resistance Ti/Al/Ni/Au Ohmic Contact to (Nh4)(2)s-X Treated N-Type Gan for High Temperature Applications