Abstract:Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its wide-band gap is a challenge. Hydrogenation is a potential method of altering the electrical properties, although is seldom experimentally measured. Here, the complex permittivity of h-BN after various hydrogen treatments have been investigated. For untreated h-BN, a frequency independent dielectric constant was measured ($\sim4.2 \pm0.2$) and an immeasurably low dielectric loss, demonstrating the ideal dielectric nature of h-BN across the $10^3$ to $10^{10}$ Hz range. However, after atomic H-plasma treatment in a microwave chemical vapour deposition (CVD) reactor, the complex permittivity amplifies dramatically, introducing dielectric dispersion through Debye-type dielectric relaxations ($\varepsilon_{\textrm{s}}\approx20\pm2$, $\varepsilon_{\infty}\approx4.2\pm0.2$) and a percolating long range conductivity ($\sim0.32$ mS/m). Annealing in molecular hydrogen at similar CVD temperatures showed minimal effect. Raman spectroscopy also detected minimal change in all samples, implying the increase is not due to other phases. This leads to the experimental conclusion that hydrogenation, through atomic H-plasma treatment, results in a moderate increase in room temperature electrical conductivity, an associated finite dielectric loss factor. The potential as a tunable wide-band gap semiconductor is highlighted however for insulating dielectric substrate applications, microwave CVD may destroy these desirable properties.

Microhardness Study of Cathode-Mounted Amorphous Hydrogenated Boron Carbide

Microhardness Study Of Amorphous Hydrogenated Boron Carbide Deposited On A Cathode Substrate By Plasma Deposition

Microhardness, Structure, and Composition Study of Amorphous Hydrogenated Boron Carbide

Hardness Measurements on Anode and Cathode Mounted, Plasma Deposited Amorphous Hydrogenated Carbon

The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide

Chemical Structure and Micro-Mechanical Properties of Ultra-Thin Films of Boron Carbide Prepared by Pulsed-Laser Deposition

Superhard Boron-Rich Boron Carbide with Controlled Degree of Crystallinity

Raman characterization of boron doped tetrahedral amorphous carbon films

Microstructure, Hardness and Toughness of Boron Carbide Thin Films Deposited by Pulse Dc Magnetron Sputtering

Micro-Hardness and Adhesion of Boron Carbon Nitride Coatings

Impact of Hydrogenation on the Stability and Mechanical Properties of Amorphous Boron Nitride

Analysis And Characterization Of Amorphous Boron Carbide Coatings Deposited From Bcl3-Ch4-H-2 Mixtures

Photovoltaic and mechanical properties of boron carbide films prepared by magnetron sputtering

Preparation, Characterization and Electrochemical Properties of Boron-Doped Diamond Films on Nb Substrates

A Study of Nano-Mechanical Properties and Nano-Scratch Behavior of Boron Carbonitride Films.

Characterization of Hydrogenated Amorphous Boron by A Combination of Infrared Absorption Spectroscopy and Thermal Analyses

Effect of boron concentration and gas pressure on the electrochemical oxidation performance changes of HFCVD diamond films on Ti substrates

Dielectric spectroscopy of hydrogenated hexagonal boron nitride ceramics

The Microstructure And Enhanced Field Electron Emission Properties Of Boron-Doped Nanocrystalline Diamond Films By Microwave Plasma Chemical Vapor Deposition

Microstructural Study of Oxidation of Carbon-Rich Amorphous Boron Carbide Coating

Stress Evolution of Tetrahedral Amorphous Carbon Upon Boron Incorporation