Boronated Tetrahedral Amorphous Carbon (Ta-C:B)

M. Chhowalla,Y. Yin,G.A.J. Amaratunga,D.R. McKenzie,Th. Frauenheim
DOI: https://doi.org/10.1016/S0925-9635(96)00760-1
IF: 3.806
1997-01-01
Diamond and Related Materials
Abstract:We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum are (FCVA). The sp(3) fraction, hardness and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 3 and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp(3) approximate to 80%) with low stress (1-3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (similar to 75%) sp(2) bonded. The bond length and angle of ta-C:B found using the radial distribution function were similar to ta-C, confirming its tetrahedral nature. Additionally, the stress in the films did not vary with the ion energy or sp(3) fraction unlike in undoped ta-C films. The ta-C:B films also exhibited higher resistivity than ta-C. This is believed to be related to the reduction of defect density measured by electron spin resonance, although the optical band gap was similar to ta-C (2.0-2.4 eV). (C) 1997 Elsevier Science S.A.
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