Abstract:Highly tetrahedral amorphous carbon (ta-C) films and its hydrogenated form (ta-C:H) have been deposited using a filtered cathodic are. In this paper, the optical and electronic band-gaps of amorphous diamond and its hydrogenated form ta-C:H, are shown to be in the range 2 eV. The H content of ta-C: H is found to be about 3 at.% using elastic recoil detection analysis (ERDA) and electron energy loss spectroscopy (EELS) is used to show that ta-C:H does keep its tetrahedral structure. Both materials are found to be stable at temperatures up to 1000K. The room temperature conductivity of 10(-7)10(-8)Omega(-1)cm(-1) is shown to be thermally activated, with activation energies in the range 0.2-0.3 eV. A detailed study made from the current-voltage characteristics of ta-Clp-Si heterojunctions shows that current flow is space-charge limited (SCLC) and influenced by bulk traps. The density of states profile, N(E), in the region of the quasi-Fermi level is calculated using the differential method and found to be of the order 10(18) cm(-3) eV(-1). Optical absorption data is coupled with the electrical results to confirm that the valence band density of states is of the order 10(21) cm(-3) eV(-1). It is also shown that there is a reduction of nearly one order of magnitude in the N(E) at the quasi-Fermi level upon hydrogenation. SCLC measurements are complemented with surface admittance measurements (SAM) which yield a value of 10(11) cm(-2) eV(-1) for the interfacial density of states at the ta-C/p-Si junction. A decrease in N-ss is also observed at the ta-C:H/p-Si interface in agreement with the SCLC results.

Highly Tetrahedral Amorphous Carbon Films with Low Stress

Boronated Tetrahedral Amorphous Carbon (Ta-C:B)

Influence of Ion Energy and Substrate Temperature on the Optical and Electronic Properties of Tetrahedral Amorphous Carbon (Ta-C) Films

Stress Evolution of Tetrahedral Amorphous Carbon Upon Boron Incorporation

Strongly Adhering and Thick Highly Tetrahedral Amorphous Carbon (ta–c) Thin Films Via Surface Modification by Implantation

Chemical analysis and vibrational properties of boronated tetrahedral amorphous carbon films

Study of Electrical Conductivity and Microcosmic Structure of Tetrahedral Amorphous Carbon Films Doped by Boron

The Structure of Boron-, Phosphorus- and Nitrogen-Doped Tetrahedral Amorphous Carbon Deposited by Cathodic Arc

Investigation of the optical properties of boron doped tetrahedral amorphous carbon films

S P 3 -Rich Deposition Conditions and Growth Mechanism of Tetrahedral Amorphous Carbon Films Deposited Using Filtered Arc

Effects of film thickness on mechanical properties of tetrahedral amorphous carbon

Electronic density of states in highly tetrahedral amorphous carbon

Gap States, Doping And Bonding In Tetrahedral Amorphous-Carbon

Influence of Carbon Ion Energy on Properties of Highly Tetrahedral Diamond-Like Carbon

Relative Fraction of Sp3 Bonding in Boron Incorporated Amorphous Carbon Films Determined by X-ray Photoelectron Spectroscopy

Cross-Sectional Structure Of Tetrahedral Amorphous Carbon Thin Films

Properties of Tetrahedral Amorphous Carbon Prepared by Vacuum Arc Deposition

Growth of Tetrahedral Amorphous Carbon Film: Tight-binding Molecular Dynamics Study

Evolution of Sp2 Bonding with Deposition Temperature in Tetrahedral Amorphous Carbon Studied by Raman Spectroscopy

Raman Spectra And Mechanical Properties Of Tetrahedral Amorphous Carbon Films Deposited By Filtered Cathodic Vacuum Arc Technology

Controlling Adhesion and Thermal Stability of Tetrahedral Amorphous Carbon Coatings with Intermediate Sp3c Fraction