Abstract:The scaling of bulk Si-based transistors has reached its limits, while novel architectures such as FinFETs and GAAFETs face challenges in sub-10 nm nodes due to complex fabrication processes and severe drain-induced barrier lowering (DIBL) effects. An effective strategy to avoid short-channel effects (SCEs) is the integration of low-dimensional materials into novel device architectures, leveraging the coupling between multiple gates to achieve efficient electrostatic control of the channel. We employed TCAD simulations to model multi-gate FETs based on various dimensional systems and comprehensively investigated electric fields, potentials, current densities, and electron densities within the devices. Through continuous parameter scaling and extracting the sub-threshold swing (SS) and DIBL from the electrical outputs, we offered optimal MoS2 layer numbers and single-walled carbon nanotube (SWCNT) diameters, as well as designed structures for multi-gate FETs based on monolayer MoS2, identifying dual-gate transistors as suitable for high-speed switching applications. Comparing the switching performance of two device types at the same node revealed CNT's advantages as a channel material in mitigating SCEs at sub-3 nm nodes. We validated the performance enhancement of 2D materials in the novel device architecture and reduced the complexity of the related experimental processes. Consequently, our research provides crucial insights for designing next-generation high-performance transistors based on low-dimensional materials at the scaling limit.

A Fast 3-D Tcad Structure Generation Method for Finfet Devices and Circuits Simulation

Fast Simulated Diffusion - an Optimization Algorithm for Multi-Minimum Problems and Its Application to Mosfet Model Parameter Extraction

Capacitance extraction of high-density 3D interconnects using finite element method

A novel layout automation flow to facilitate test chip design for standard cell characterization

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Large-scale Integrated Circuits Simulation Based on CNT-FET Model

Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

A Multi-physics TCAD Framework for Fast and Accurate Simulation of SteepSlope Si-based Cold Source FET

A Quasi-3-dimensional Simulation Method for a High-Voltage Level-Shifting Circuit Structure

Speeding up carbon nanotube integrated circuits through three-dimensional architecture

Element Edge Based Discretization for TCAD Device Simulation

3D Simulation of Mutil-Gate MOSFET with Sub-100nm

Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFET

Study On Scalability Of Hybrid Junctionless Finfet And Multi-Stacked Nanowire Fet By Tcad Simulation

TCAD Simulations of Reconfigurable Field-Effect Transistor with Embedded-Fin-Contact to Improve On-Current

TCAD Simulation Study of Single-, Double-, and Triple-Material Gate Engineered Trigate FinFETs

Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

A 3D Parallel Monte Carlo Simulator for Semiconductor Devices

TCAD Simulation of Novel Multi-Spacer HK/MG 28nm Planar MOSFET for Sub-threshold Swing and DIBL Optimization

Performance Projections for Ballistic Carbon Nanotube FinFET at Circuit Level

Performance Trade-offs in Complementary FET (CFET) Device Architectures for 3nm-node and Beyond