Abstract:In this work, a triple metal gate -ferroelectric material -with SiGe heterojunction based vertical structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and investigated. It also demonstrated the effect of ferroelectric gate oxide material gate stack with high-K dielectric constant on heterojunction vertical TFET structure. The ratio of body capacitance to oxide capacitance will be reduced if negative capacitance is added to the gate oxide series such as ferroelectric material. Three of the engineering methods opted for optimized the device ON and OFF current and its ratio. Shape engineering, Heterojunction engineering and device work function opted during the analysis of the proposed devices. Four of the devices designed TMG-VTFET, TMG-FE-VTFET, TMG-SiGe-VTFET and TMG-FE-SiGe-VTFET device designs with and without ferroelectric oxide material and SiGe layer at source-channel interface are evaluated using various simulation characteristics in order to validate and optimize the results. Electrical characteristics performance simulated and compared for analysis of energy band diagram, electron/hole carrier concentration, electric field, BTBT rate (electron and hole), e-mobility, h-mobility, Electron/Hole QFL (quasi-fermi-level), Id vs Vgs, Id vs Vds, surface potential, transconductance of all proposed configurations. The used work function optimized at 4.15 eV, 4.35 eV, 4.15 eV for ϕm1, ϕm2 and ϕm3 respectively. The highest ION current (1.28 × 10−4 A/μm) and minimum IOFF current (7.59 × 10−18 A/μm) is recorded for the TMG-FE-SiGe-VTFET structure respectively. TMG-FE-SiGe-VTFET holds the maximum ION/IOFF current ratio of 10 ~ 13 and the lowest SS of 9.97 mV/decade among all other configurations. Finally, this work found suitable and helpful for analyzing low power application with improved performance.

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