Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Conduction Investigation In Oxide-Based Resistive Random Access Memory With Low Frequency Noise Analysis

Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Random Telegraph Noise Analysis In Alox/Woy Resistive Switching Memories

Percolation Theory Based Model of Conduction Mechanism and Characteristic Contradiction in ZnO RRAM

Microscopic Origin of Read Current Noise in TaOx-based Resistive Switching Memory by Ultra-Low Temperature Measurement

Conduction Mechanism and Impedance Analysis of HfOx-based RRAM at Different Resistive States

Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states

Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation

Study of Conduction and Switching Mechanisms in Al/Alox/Wox/W Resistive Switching Memory for Multilevel Applications

Quantum Point Contact Model of Filamentary Conduction in Resistive Switching Memories

Characteristics of Low Frequency Noise in N<sup>+</sup>si-Hfo<inf>2</inf>-ni Resistive Random Access Memory

Revelation of resistive switching mechanism in AlOx based RRAM device

Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching

Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals

Investigations of Conduction Mechanisms of the Self-Rectifying N+si-Hfo2–ni RRAM Devices

Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Κ Dielectric Based Resistive Random Access Memory

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory