Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Percolation Theory Based Model of Conduction Mechanism and Characteristic Contradiction in ZnO RRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Conduction Mechanisms Analysis of ZrO2-based Electrochemical Metallization RRAM in Different RESET Modes

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Conduction Mechanisms Analysis of ZrO2-based 2-Based Electrochemical Metallization RRAM in Different RESET Modes

Revelation of resistive switching mechanism in AlOx based RRAM device

Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

Study on Multilevel Resistive Switching Behavior with Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

A Unified Physical Model of Switching Behavior in Oxide-Based RRAM

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

An overview of the switching parameter variation of RRAM

Design of a Two-Layer Structure to Significantly Improve the Performance of Zinc Oxide Resistive Memory

The storage mechanism of resisitive random access

Investigations of Conduction Mechanisms of the Self-Rectifying N+si-Hfo2–ni RRAM Devices

Performance Enhancement of Nonvolatile Resistive Switching Memory device Made from WO<sub>X</sub>/ZnO Bilayer Structure

A Non-Filamentary Model for Unipolar Switching Transition Metal Oxide Resistance Random Access Memories

Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory