Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis

Z. Fang,H. Y. Yu,W. J. Fan,G. Ghibaudo,J. Buckley,B. DeSalvo,X. Li,X. P. Wang,G. Q. Lo,D. L. Kwong

DOI: https://doi.org/10.1109/TED.2013.2240457

IF: 3.1

2013-01-01

IEEE Transactions on Electron Devices

Abstract:A conduction model consisting of two parallel resistances from a highly conductive filament region and a uniform leakage oxide region is proposed in this brief to represent the current conduction in the filament-type switching resistive random access memory cell. Low-frequency noise analysis of current fluctuation at different resistance states has been employed to verify its efficiency. It is fou...