Abstract:The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.

Atomic Level 1 D Structural Modulations at the Negatively Charged Domain Walls in BiFeO 3 Films

Atomic Scale Structure Changes Induced by Charged Domain Walls in Ferroelectric Materials.

Imaging and Quantification of Charged Domain Walls in BiFeO3

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Ultrathin Non‐Ising Charged Domain Walls Confined in BiFeO3 Nanocrystals

Atomic-scale mapping of dipole frustration at 90° charged domain walls in ferroelectric PbTiO3 films

Atomic-Scale Evolution of Local Electronic Structure Across Multiferroic Domain Walls

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Interface Engineering Of Domain Structures In Bifeo3 Thin Films

Evidence of Sharp and Diffuse Domain Walls Inbifeo3by Means of Unit-Cell-Wise Strain and Polarization Maps Obtained with High Resolution Scanning Transmission Electron Microscopy

Conductive Tail-to-tail Domain Walls in Epitaxial BiFeO3 Films

In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

Ferroelectric Domains in Multiferroic BiFeO3 Films under Epitaxial Strains.

Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film

Understanding and Predicting Geometrical Constraint Ferroelectric Charged Domain Walls in a BiFeO3 Island Via Phase-Field Simulations

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films

Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

Ferroelectric polarization and magnetic structure at domain walls in a multiferroic film

Topological interfacial states in ferroelectric domain walls of two-dimensional bismuth