Abstract:Nonlinear defect interactions between the 180° domain wall and oxygen-vacancies (O-vacancies) in PbTiO3, and the characteristic ferroelectricity due to the interactions are investigated using first-principles calculations based on the hybrid Hartree-Fock (HF) density functionals, which correctly reproduce the band gap and provide the accurate defect electronic structures. We show that an oxygen vacancy is likely to form at 180° domain walls than inside the bulk and the vacancy behaves as a double shallow donor that contributes to partial conductivity preferentially than that inside the bulk. The defect interactions between 180° domain walls and oxygen vacancies have a significant influence on the polarization distribution in PbTiO3, and the effect differs depending on the location of O-vacancies with respect to the domain wall. An oxygen vacancy that is located in the polar [001] direction relative to the Ti atom suppresses ferroelectricity around the vacancy in front of a domain wall, and enhances ferroelectricity only an the center of domain wall, which leads to a shift of the domain wall towards the vacancy and pinning of the domain wall. On the other hand, an O-vacancy that is located in the non-polar [100] and [010] directions relative to the Ti atom induces polarization perpendicular to the [010] axis and outward from the vacancy. Furthermore, the magnitude of polarization change around the O-vacancy inside the 180° domain wall is larger than inside the bulk, which originates from the strong interaction between the 180° domain wall and O-vacancy. These results will provide significant fundamental insight for the design of ferroelectrics.

Atomic-scale mapping of dipole frustration at 90° charged domain walls in ferroelectric PbTiO3 films

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Hybrid Functional Study on the Ferroelectricity of Domain Walls with O-vacancies in PbTiO3

Domain wall architecture in tetragonal ferroelectric thin films

Multiferroic Domain Walls in Ferroelectric PbTiO3 with Oxygen Deficiency.

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Atomic-environment-dependent thickness of ferroelastic domain walls

Imaging and Quantification of Charged Domain Walls in BiFeO3

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Atomic Scale Structure Changes Induced by Charged Domain Walls in Ferroelectric Materials.

Atomic-environment-dependent Thickness of Ferroelastic Domain Walls Near Dislocations

Conductive Tail-to-tail Domain Walls in Epitaxial BiFeO3 Films

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Ferroelectric polarization and magnetic structure at domain walls in a multiferroic film

Interactions of charged domain walls and oxygen vacancies in BaTiO 3 : a first-principles study

Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film

In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

Phase-field modeling and electronic structural analysis of flexoelectric effect at 180° domain walls in ferroelectric PbTiO3

Atomic Mechanism of Polarization-Controlled Surface Reconstruction in Ferroelectric Thin Films.

Effect of correlated oxide electrodes on disorder pinning and thermal roughening of ferroelectric domain walls in epitaxial Pb Zr 0.2 Ti 0.8 O 3 thin films