Abstract:Flexoelectricity is an electromechanical coupling effect between the polarization and strain gradient in all dielectrics regardless of point group symmetry. Due to its significant influence on material behavior at the nanoscale, the flexoelectric effect has attracted more and more attention in recent years. In this paper, a real space phase field model for the flexoelectric effect in ferroelectric materials is developed by using isogeometric analysis (IGA). The IGA employs the same smooth and high-order basis functions to describe both the geometry of material and the solution of phase field, which is able to give an accurate and efficient description of the flexoelectric effect in ferroelectrics with arbitrary geometrical shapes and boundary conditions. To this end, phase field simulations on the effect of flexoelectricity are conducted for nanoscale ferroelectrics with different geometrical shapes and boundary conditions. The simulation results show that the flexoelectric effect has significant influence on the domain structures and domain switching of ferroelectric materials at the nanoscale. For ferroelectric nanobeam under bending load, due to the flexoelectric effect, the mechanical bending can break the symmetry of hysteresis loop between electric field and polarization. As for ferroelectric nanodots, the flexoelectric effect increases the magnitude of spontaneous polarizations and results in the tilting of polarization vortex. In addition, out-of-plane components appear in the polarization vortex of ferroelectric nanodots due to the flexoelectric effect, which increases the coercive field for the switching of polarization vortex and changes the switching process significantly. The present work not only presents an effective nonlocal model for the domain evolution in ferroelectric materials with the consideration of the flexoelectric effect, but also asymmetric hysteresis loop between polarization and external electric field for ferroelectric beam, and new switching behavior of the polarization vortex in ferroelectric nanodots due to the flexoelectric effect.

Phase-field modeling and electronic structural analysis of flexoelectric effect at 180° domain walls in ferroelectric PbTiO3

An Isogeometric Approach to Flexoelectric Effect in Ferroelectric Materials

Phase Field Simulations of Ferroelectric Nanoparticles with Different Long-Range-electrostatic and -Elastic Interactions

Phase Field Modeling of Flexoelectric Effects in Ferroelectric Epitaxial Thin Films

Phase-field Simulations on the Electrocaloric Properties of Ferroelectric Nanocylinders with the Consideration of Surface Polarization Effect

Domain Structures and Phase Diagram in 2D Ferroelectrics under Applied Biaxial Strains - Phase Field Simulations and Thermodynamic Calculations

Phase Transitions and Domain Structures of Ferroelectric Nanoparticles: Phase Field Model Incorporating Strong Elastic and Dielectric Inhomogeneity

Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers.

Hybrid Functional Study on the Ferroelectricity of Domain Walls with O-vacancies in PbTiO3

Domain Engineering the Flexoelectric Response of BaTiO3–SrTiO3 Binary Films: A Phase Field Study

Mapping Gradient-Driven Morphological Phase Transition at the Conductive Domain Walls of Strained Multiferroic Films

Ferroelastic Twin Domain Patterns and Polar Domain Walls of BiVO4 Thin Films Via Phase-Field Simulations

Origin of the Bloch-type Polarization Components at the 180° Domain Walls in Ferroelectric PbTiO3

Ferroelectric Domain Structure and Atomic-Scale Phase Distribution in a Pb (Mg1/3nb2/3)o3-Pbtio3 Single Crystal

Phase Field Modeling For Domain Characterization Of Ferroelectric Materials

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

First-principles Study Of180∘domain Walls Inbatio3: Mixed Bloch-Néel-Ising Character

Chiral Phase Transition at 180° Domain Walls in Ferroelectric PbTiO3 Driven by Epitaxial Compressive Strains

Oxygen Octahedral Coupling Mediated Ferroelectric-Antiferroelectric Phase Transition Based on Domain Wall Engineering

Flexoelectric Domain Walls Originated from Structural Phase Transition in Epitaxial BiVO4 Films.

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity