Abstract:Gallium nitride (GaN) is a key material in blue light-emitting devices and is recognized as one of the most important semiconductors after Si. Its outstanding thermal conductivity, high saturation velocity, and high breakdown electric field have enabled the use of GaN for high-power and high-frequency devices. Although lots of researches have been done on the optical and optoelectrical properties of GaN, the defect-related ultrafast dynamics of the photo-excitation and the relaxation mechanism are still completely unclear at present, especially when the photo-generated carrier concentration is close to the defect density in n-type GaN. The transient absorption spectroscopy has become a powerful spectroscopic method, and the advantages of this method are contact-free, highly sensitive to free carriers, and femtosecond time resolved. In this article, by employing optical pump and infrared probe spectroscopy, we investigate the ultrafast photo-generated carriers dynamics in representative high-purity n-type and Ge-doped GaN (GaN:Ge) crystal. The transient absorption response increased as probe wavelengths increased, and hole-related absorption was superior to electron-related absorption, especially at 1050 nm. The transient absorption kinetics in GaN:Ge appeared to be double exponential decay under two-photon excitation. By modelling the carrier population dynamics in energy levels, which contained both radiative and non-radiative defect states, the carrier dynamics and carrier capture coefficients in GaN: Ge can be interpreted and determined unambiguously. The faster component (30–60 ps) of absorption decay kinetics corresponded to the capturing process of holes by negatively charged acceptor CN. However, the capturing process was limited by the recombination of electron and trapped holes under higher excitation after the saturation of deep acceptors. As a result, the slower component decayed slower as the excitation fluence increased. Moreover, the experimental and theoretical results found that, the carrier lifetime in n-GaN can be modulated by controlling the defect density and carrier concentration under a moderate carrier injection, making GaN applicable in different fields such as LED and optical communication.

Impact of Carrier Localization, Recombination, and Diffusivity on Excited State Dynamics in InGaN/GaN Quantum Wells

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: insights from theory and numerical simulations

Carrier recombination dynamics in InGaN/GaN multiple quantum wells

Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Non-exponential Photoluminescence Decay Dynamics of Localized Carriers in Disordered InGaN/GaN Quantum Wells: the Role of Localization Length

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

Defect Recombination Induced by Density-Activated Carrier Diffusion in Nonpolar InGaN Quantum Wells

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Localized Exciton Dynamics in AlInGaN Alloy

Resolving Exciton Diffusion in Ingaas Quantum Wells Using Micro-Photoluminescence Mapping with A Lateral Excitation

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Dynamics of Below-Band-Gap Carrier in Highly Excited GaN

Study on Two-Photon Induced Ultrafast Carrier Dynamcis in Ge-doped GaN by Transient Absorption Spectroscopy

Carrier localization mechanisms in InGaN/GaN quantum wells

Effects Of Reduced Exciton Diffusion In Ingan/Gan Multiple Quantum Well Nanorods

Carrier Dynamics Determined by Carrier-Phonon Coupling in InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes