Fabrication and Characterization of On-chip Chalcogenide Nano-waveguide Devices

Qiming Zhang,Xiang Wu,Ming Li,Liying Liu,Lei Xu

DOI: https://doi.org/10.1364/fio.2010.fthc4

2010-01-01

Abstract:Buried As2S3 nano-waveguides with size down to 200 nm on silicon wafer are prepared. The fabricated waveguide and micro-ring cavity show excellent optical properties. Optical nonlinearity of the nano-waveguides is characterized as well.

What problem does this paper attempt to address?

Fabrication and Characterization of On-Chip Optical Nonlinear Chalcogenide Nanofiber Devices

Qiming Zhang,Ming Li,Qiang Hao,Dinghuan Deng,Hui Zhou,Heping Zeng,Li Zhan,Xiang Wu,Liying Liu,Lei Xu

DOI: https://doi.org/10.1364/ol.35.003829

2010-01-01

Abstract:Chalcogenide (As(2)S(3)) nanofibers as narrow as 200 nm in diameter are drawn by the fiber pulling method, are successfully embedded in SU8 polymer, and form on-chip waveguides and high-Q microknot resonators (Q = 3.9 × 10(4)) with smooth cleaved end faces. Resonance tuning of resonators is realized by localized laser irradiation. Strong supercontinuum generation with a bandwidth of 500 nm is achieved in a 7-cm-long on-chip chalcogenide waveguide. Our result provides a method for the development of compact, high-optical-quality, and robust photonic devices.
Rib and strip chalcogenide waveguides based on Ge-Sb-Se radio-frequency sputtered films

Wei Zhang,Shixun Dai,Xiang Shen,Yu Chen,Shuangshuang Zhao,Changgui Lin,Liang Zhang,Jian Bai

DOI: https://doi.org/10.1016/j.matlet.2013.01.122

IF: 3

2013-01-01

Materials Letters

Abstract:Rib and strip chalcogenide waveguides were demonstrated using photolithography technique and reactive ion beam etching method in a CF4/Ar atmosphere, based on Ge–Sb–Se films deposited by radio-frequency sputtering. The study of compositional, morphological and structural characteristics of the films was investigated, the propagation losses with different widths were measured and optical performance in rib and strip waveguides with different sizes were analyzed and compared. The thin films showed similar composition identical to the bulk glass targets with very low surface roughnesses. The fabricated waveguides by reactive ion beam etching had low surface roughnesses and reasonable vertical sidewalls. Propagation losses of rib and strip waveguides were measured at 1550nm with different widths, and the methods to decrease the propagation losses were introduced. The techniques were indicated feasible for fabricating rib and strip waveguides with potential applications of integrated optics fields in further study.
Fabrication of silicon-on-glass waveguides

Jianyi Yang,GuangBo Li,Simiao Xiao,Fan Wang,Yubo Li,Xiaoqing Jiang,Minghua Wang,Yuelin Wang-

DOI: https://doi.org/10.1109/GROUP4.2005.1516405

2005-01-01

Abstract:The method to fabricate silicon-on-glass materials for the applications of integrated optics and photonics is proposed. Anodic boning and selective etching are employed. SOG-based rib waveguides and nano-films are then studied.
Thermal nanoimprint fabrication of chalcogenide glass waveguide resonators on nonconventional plastic substrates

yi zou,hongtao lin,lan li,sylvain danto,j david musgraves,kathleen richardson,juejun hu

DOI: https://doi.org/10.1109/PHOSST.2013.6614542

2013-01-01

Abstract:We demonstrated thermal nanoimprint fabrication of photonic devices in chalcogenide glass films on both semiconductor and nonconventional plastic substrates. A high micro-ring intrinsic quality factor of 3 × 105 is achieved at 1550 nm wavelength.
Thermal Nanoimprint Fabrication Of Chalcogenide Glass Waveguide Resonators

Yi Zou,Hongtao Lin,Lan Li,Sylvain Danto,J. David Musgraves,Kathleen Richardson,Juejun Hu

DOI: https://doi.org/10.1364/CLEO_SI.2013.CTh1J.5

2013-01-01

Abstract:We demonstrated thermal nanoimprint fabrication of low loss waveguides and micro-ring resonators in thermally evaporated and solution processed chalcogenide glass films. A high micro-ring quality factor of 75,000 is achieved at 1550 nm wavelength. (c) 2013 Optical Society of America
Fabrication of Si/Si1-Xgex Waveguide Wdm Components

DX Xu,S Janz,R Williams,E Allegretto,S Mailhot,JJ He,JM Baribeau,H Lafontaine,J Stapledon,JW Fraser,M Robillard,P Jessop,S Kovacic

DOI: https://doi.org/10.1117/12.273852

1997-01-01

Abstract:The design of manufacturable Si/Si1-xGex waveguide WDM components involves several unique materials and fabrication issues which must be confronted and resolved. Accurate data for the refractive indices of the waveguide materials are essential. Furthermore, the waveguide design is tightly constrained by the requirement that Si/Si1-xGex layer thickness is within the pseudomorphic growth limit. By combining refractive indices determined from mode profile measurements of MBE and CVD grown waveguides, and epilayer thickness constraints set by the pseudomorphic growth limits, we have determined a set of design criteria for Si/Si1-xGex waveguides for WDM and optical signal routing applications.Optically smooth and vertical Si/Si1-xGex waveguide facets are critical in permitting highly efficient coupling between the fiber and the Si chip. Since Si has an equal probability of cleaving along either the < 110 > or < 111 > planes, producing such high quality facets consistently is extremely challenging. We have demonstrated that high quality facets can be obtained consistently by cleaving, with and without a dielectric layer on Si substrates.
Mid-infrared As2Se3 Chalcogenide Glass-on-silicon Waveguides

Hongtao Lin,Yi Zou,Danto, S.,Musgraves, J.D.

DOI: https://doi.org/10.1109/group4.2012.6324148

2012-01-01

Abstract:We report the fabrication and characterization of high-index-contrast AssSe3 chalcogenide glass waveguides on silicon. Guided mode optical transmission are measured at 5.27 μm mid-infrared wavelength with low optical loss.
Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass

M. Hughes,W. Yang,D. Hewak

DOI: https://doi.org/10.1063/1.2718486

2021-10-20

Abstract:The authors describe the fabrication of buried waveguides in a highly nonlinear chalcogenide glass, gallium lanthanum sulfide, using focused femtosecond laser pulses. Through optical characterization of the waveguides, they have proposed a formation mechanism and provide comparisons to previous work. Tunneling has been identified as the dominant nonlinear absorption mechanism in the formation of the waveguides. Single mode guidance at 633 nm has been demonstrated. The writing parameters for the minimum propagation loss of 1.47 dB/cm are 0.36 uJ pulse energy and 50 um/s scanning speed.

Materials Science,Optics
A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Samuel Serna,Hongtao Lin,Carlos Alonso-Ramos,Xavier Le Roux,Kathleen A. Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien

2020-01-01

Abstract:We demonstrate a highly nonlinear hybrid waveguide platform based on infiltration of As2S3 chalcogenide glass into silicon slot waveguides. The nonlinear properties of the hybrid waveguides have been precisely quantified via a bidirectional top-hat D-scan method, enabling a direct comparison between properties measured using different device geometries. We experimentally report hybrid As2S3-Si slot waveguides with a two-photon absorption (TPA) figure of merit exceeding 2 at near infrared wavelengths. These waveguides allow for nonlinear phase shifts greater than π with minimal overall losses. These results pave the way for efficient and robust ultrafast all-optical devices and circuits in large-scale silicon photonics technology.
Fabrication and characterization of deeply-etched SiO2 waveguides

Zhen Sheng,Liu Yang,Daoxin Dai,Tingting Lang,Zhechao Wang

DOI: https://doi.org/10.1109/AOE.2007.4410860

2007-01-01

Abstract:Deeply-etched SiO2 waveguide is fabricated and characterized. The fabrication process is easier than the conventional buried SiO2 waveguide. The fabricated waveguide exhibits good performances, such as low propagation loss, broad band.
Fabrication and Characterization of Ge 20 Sb 15 Se 65 Chalcogenide Glass Rib Waveguides for Telecommunication Wavelengths

Jun Li,Xiang Shen,Junqiang Sun,Khu Vu,Duk-Yong Choi,Rongping Wang,Barry Luther-Davies,Shixun Dai,Tiefeng Xu,Qiuhua Nie

DOI: https://doi.org/10.1016/j.tsf.2013.07.078

IF: 2.1

2013-01-01

Thin Solid Films

Abstract:We report on the fabrication and optical properties of Ge20Sb15Se65 chalcogenide glass rib waveguides on a single photonic chip. Radio-frequency magnetron sputtering method is employed to deposit 1.36-μm-thick films and reactive ion etching with CHF3 is used to pattern 0.76-μm-deep rib waveguides of 1–4 μm wide with low surface roughness and vertical sidewalls. Using lensed fibers, the insertion losses for rib waveguides of different widths are measured and propagation losses are estimated to be lower than 1 dB/cm. Finite difference method simulations and refractive index/curve fitting are used to observe a moderate normal dispersion of the waveguides at 1550 nm.
Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Zhihua Tu,Daru Chen,Hao Hu,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.3390/app10228087

2020-01-01

Applied Sciences

Abstract:Optical communication using the 2 μm wavelength band is attracting growing attention for the sake of mitigating the information ‘capacity crunch’ on the way, where on-chip nonlinear waveguides can play vital roles. Here, silicon-rich nitride (SRN) ridge waveguides with different widths and rib heights are fabricated and measured. Linear characterizations show a loss of ~2 dB/cm of the SRN ridge waveguides and four-wave mixing (FWM) experiments with a continuous wave (CW) pump reveal a nonlinear refractive index of ~1.13 × 10−18 m2/W of the SRN material around the wavelength 1950 nm. With the extracted parameters, dimensions of the SRN ridge waveguides are optimally designed for improved nonlinear performances for the 2 μm band, i.e., a maximal nonlinear figure of merit (i.e., the ratio of nonlinearity to loss) of 0.0804 W−1 or a super-broad FWM bandwidth of 518 nm. Our results and design method open up new possibilities for achieving high-performance on-chip nonlinear waveguides for long-wavelength optical communications.
Demonstration of High-Performance, Sub-Micron Chalcogenide Glass Photonic Devices by Thermal Nanoimprint

Yi Zou,Loise Moreel,Jie Zhou,Danning Zhang,Hongtao Lin,Lan Li,Qingyang Du,Juejun Hu,Sylvain Danto,Kathleen Richardson,J. David Musgraves,Kevin D. Dobson,Robert Birkmire

DOI: https://doi.org/10.1117/12.2040454

2014-01-01

Abstract:High-index-contrast optical devices form the backbone of densely integrated photonic circuits. While these devices are traditionally fabricated using lithography and etching, their performance is often limited by defects and sidewall roughness arising from fabrication imperfections. This paper reports a versatile, roll-to-roll and backend compatible technique for the fabrication of high-performance, high-index-contrast photonic structures in composition-engineered chalcogenide glass (ChG) thin films. Thin film ChG have emerged as important materials for photonic applications due to their high refractive index, excellent transparency in the infrared and large Kerr non-linearity. Both thermally evaporated and solution processed As-Se thin films are successfully employed to imprint waveguides and micro-ring resonators with high replicability and low surface roughness (0.9 nm). The micro-ring resonators exhibit an ultra-high quality-factor of 4 x 10(5) near 1550 nm wavelength, which represents the highest value reported in ChG micro-ring resonators. Furthermore, sub-micron nanoimprint of ChG films on non-planar plastic substrates is demonstrated, which establishes the method as a facile route for monolithic fabrication of high-index-contrast devices on a wide array of unconventional substrates.
Sub-micrometer-thick and Low-Loss Ge20Sb15Se65 Rib Waveguides for Nonlinear Optical Devices

Jun Li,Fen Chen,Xiang Shen,Shi-xun Dai,Tie-feng Xu,Qiu-hua Nie

DOI: https://doi.org/10.1007/s11801-015-4231-y

2015-01-01

Optoelectronics Letters

Abstract:We report the fabrication and optical properties of sub-micrometer-thick Ge 20 Sb 15 Se 65 chalcogenide rib waveguides. The radio-frequency (RF) magnetron sputtering method is used to deposit 0.83 μm-thick films. A protective layer of SU-8 is employed to prevent the attack of the alkaline developer, and CHF 3 is used as the etching plasma for reactive ion etching (RIE). Finally, the resulted rib waveguides with smooth sidewalls and vertical pattern profiles are rendered. The propagation losses for 4 μm-wide waveguides are measured to be 0.7 dB/cm for transverse electric (TE) modes and 0.68 dB/cm for transverse magnetic (TM) modes at 1 550 nm via the cutback method.
Fabrication and Characterization of Silicon Photonic Waveguides and Devices Via Selective Oxidation Process

Xiaokun Wang,Xiaowei Guan,Yaocheng Shi,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2012.ath1b.3

2012-01-01

Abstract:Silicon-on-insulator (SOI) optical waveguides are fabricated via selective oxidation process without any silicon etching step so that the waveguide surface becomes very smooth to achieve low-loss light propagation potentially. A high-Q ring-resonator is also demonstrated.
Fabrication and Characterization of Suspended SiO2 Ridge Optical Waveguides and the Devices.

Pengxin Chen,Yunpeng Zhu,Yaocheng Shi,Daoxin Dai,Sailing He

DOI: https://doi.org/10.1364/oe.20.022531

IF: 3.8

2012-01-01

Optics Express

Abstract:Novel suspended SiO(2) ridge optical waveguides on silicon are fabricated and characterized. The present suspended SiO(2) ridge optical waveguide has a SiO(2) ridge core surrounded by air. The propagation loss and the bend loss measured are about 0.385dB/cm and 0.037dB/90° respectively for the fabricated 1 μm-wide waveguides with a bending radius of 100 μm when operating at the wavelength of 1550 nm. With the present suspended SiO(2) optical waveguides, a small racetrack resonator with a radius of 100 μm is also demonstrated and the measured Q-factor is about 3160.
Study on Properties of Silicon Nano-Slab Waveguides

XIAO Si-miao,LI Yu-bo,LI Guang-bo,JIANG Xiao-qing,WANG Ming-hua,YANG Jian-yi

DOI: https://doi.org/10.3969/j.issn.1005-5630.2005.05.021

2005-01-01

Abstract:In this article we analyzed the guiding properties of air-clad silicon dielectric optical waveguides which have the core width of nanometre size based on Maxwell equation and numerical analysis.By programming,we obtained the proportion of power distribution in cladding,core,and substrate;the curve of how the effective refractive index varied with the core width;how group refractive index and group velocities varied with wavelength and the dispersion curve.We compared these properties with micron-sized waveguides,and found that because of the decrease of core width,the mode field leaks out a lot,which enhances the coupling.This is very important to design and fabric nano-sized optical devices.
Low-loss Photonic Device in Ge-Sb-S Chalcogenide Glass.

Qingyang Du,Yizhong Huang,Junying Li,Derek Kita,Jerome Michon,Hongtao Lin,Lan Li,Spencer Novak,Kathleen Richardson,Wei Zhang,Juejun Hu

DOI: https://doi.org/10.1364/ol.41.003090

IF: 3.6

2016-01-01

Optics Letters

Abstract:Low-loss waveguides constitute an important building block for integrated photonic systems. In this work, we investigated low-loss photonic device fabrication in Ge23Sb7S70 chalcogenide glass using electron beam lithography followed by plasma dry etching. High-index-contrast waveguides with a low propagation loss of 0.5 dB/cm and microdisk resonators with an intrinsic quality factor (Q-factor) of 1.2×106 were demonstrated. Both figures represent, to the best of our knowledge, the best low-loss results reported thus far in submicrometer single-mode chalcogenide glass devices.
Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Wei Li,P. Anantha,Shuyu Bao,Kwang Hong Lee,Xin Guo,Ting Hu,Lin Zhang,Hong Wang,Richard Soref,Chuan Seng Tan

DOI: https://doi.org/10.1063/1.4972183

IF: 4

2016-01-01

Applied Physics Letters

Abstract:A germanium-based platform with a large core-clad index contrast, germanium-on-silicon nitride waveguide, is demonstrated at mid-infrared wavelength. Simulations are performed to verify the feasibility of this structure. This structure is realized by first bonding a silicon-nitride-deposited germanium-on-silicon donor wafer onto a silicon substrate wafer, followed by the layer transfer approach to obtain germanium-on-silicon nitride structure, which is scalable to all wafer sizes. The misfit dislocations which initially form along the interface between germanium/silicon can be removed by chemical mechanical polishing after layer transfer process resulting in a high-quality germanium layer. At the mid-infrared wavelength of 3.8 μm, the germanium-on-silicon nitride waveguide has a propagation loss of 3.35 ± 0.5 dB/cm and a bend loss of 0.14 ± 0.01 dB/bend for a radius of 5 μm for the transverse-electric mode.
High-Quality Chalcogenide Glass Waveguide Fabrication by Hot Melt Smoothing and Micro-Trench Filling

Yanfen Zhai,Renduo Qi,Chenzhi Yuan,Wei Zhang,Yidong Huang

DOI: https://doi.org/10.7567/apex.9.052201

IF: 2.819

2016-01-01

Applied Physics Express

Abstract:We propose a fabrication method for chalcogenide glass (ChG) waveguides based on hot melt smoothing and micro-trench filling. ChGs has low melting points and good flowability. Experiments show that this method can realize high quality As2S7 glass waveguides with reverse ridge structures. The attenuations of the fundamental quasi-TE mode and quasi-TM mode are 0.1 and 0.9 dB/cm, respectively. This method avoids fabrication processes, such as photolithography, lift-off, and dry or wet etching that are directly applied to the ChG films. It provides a simple way to fabricate high quality ChG waveguides, which have great potential for applications in integrated nonlinear optical devices. (C) 2016 The Japan Society of Applied Physics

Fabrication and Characterization of On-chip Chalcogenide Nano-waveguide Devices

Fabrication and Characterization of On-Chip Optical Nonlinear Chalcogenide Nanofiber Devices

Rib and strip chalcogenide waveguides based on Ge-Sb-Se radio-frequency sputtered films

Fabrication of silicon-on-glass waveguides

Thermal nanoimprint fabrication of chalcogenide glass waveguide resonators on nonconventional plastic substrates

Thermal Nanoimprint Fabrication Of Chalcogenide Glass Waveguide Resonators

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Mid-infrared As2Se3 Chalcogenide Glass-on-silicon Waveguides

Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass

A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Fabrication and characterization of deeply-etched SiO2 waveguides

Fabrication and Characterization of Ge 20 Sb 15 Se 65 Chalcogenide Glass Rib Waveguides for Telecommunication Wavelengths

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Demonstration of High-Performance, Sub-Micron Chalcogenide Glass Photonic Devices by Thermal Nanoimprint

Sub-micrometer-thick and Low-Loss Ge20Sb15Se65 Rib Waveguides for Nonlinear Optical Devices

Fabrication and Characterization of Silicon Photonic Waveguides and Devices Via Selective Oxidation Process

Fabrication and Characterization of Suspended SiO2 Ridge Optical Waveguides and the Devices.

Study on Properties of Silicon Nano-Slab Waveguides

Low-loss Photonic Device in Ge-Sb-S Chalcogenide Glass.

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

High-Quality Chalcogenide Glass Waveguide Fabrication by Hot Melt Smoothing and Micro-Trench Filling