Abstract:Charge trapping resulting in localized band bending on MBE-grown GaN films was investigated using a new combination of conducting atomic force microscopy (CAFM) and scanning Kelvin probe microscopy (SKPM). CAFM was first used to locally inject charge at the surface oxide/semiconductor interface, and then SKPM was performed to monitor the evolution of the resulting surface potential. In a dark environment, the additionally charged interface states due to CAFM charge injection resulted in an induced additional band bending that persisted for hours. The induced band bending is nominal (< 0.5 eV) for CAFM voltages less than 8 V, and reaches a saturation value of -3 eV for voltages greater than 10 V. The saturation band bending corresponds to a total density of charged interface states (2 x 10(12) cm(-2)) that is double the value observed for the intrinsic surface. Induced band bending could still be observed up to 4 h after charge injection, indicating that charge trapping is relatively stable in a dark environment. However, charged interface states could be rapidly neutralized by illumination with UV light. A phenomenological model based on a tunneling mechanism was used to successfully describe the CAFM charge injection, where electrons travel from the tip through an oxide barrier and become trapped at oxide/GaN interface states. Saturation occurs due to the existence of a finite density of chargeable states at the interface. After charge injection, the decrease in induced band bending with time was found to be consistent with a thermionic model of charge transfer from the interface to the bulk.

Conductive Atomic Force Microscopy Study Of Mbe Gan Films

Study Of Leakage Defects On Gan Films By Conductive Atomic Force Microscopy

Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy

Investigation of Forward and Reverse Current Conduction in GaN Films by Conductive Atomic Force Microscopy

Valve Behavior Of Giant Magnetoimpedance In Field-Annealed Co70fe5si15nb2.2cu0.8b7 Amorphous Ribbon

Investigation Of Charge Trapping At The Oxide/Semiconductor Interface For Mbe-Grown Gan Films

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

Surface Properties Of Unintentionally Doped Gan Film And Its Contact Behaviour With Ni/Cr/Au Compound Metals

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Morphology dependent surface properties of nanostructured GaN films grown by molecular beam epitaxy

Conductive Atomic Force Microscopy (C-AFM) Observation of Conducting Nanofilaments Formation in GeSbTe Phase Change Materials

XPS and AES Investigation of GaN Films Grown by MBE

Spatial Variation of Electrical Properties in Lateral Epitaxially Overgrown Gan

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

Anisotropic Defect Structure of GaN Film Grown by MOCVD

Characterization of Gan/Sapphire Interface and the Buffer Layer by TEM/AFM

Morphology of Mbe Grown Inas Films Studied by Atomic Force Microscope

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Nanoscale Capacitance and Capacitance-Voltage Curves for Advanced Characterization of Electrical Properties of Si and GaN Structures Using Scanning Microwave Impedance Microscopy