Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Investigation of Forward and Reverse Current Conduction in GaN Films by Conductive Atomic Force Microscopy

Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy

Conductive Atomic Force Microscopy Study Of Mbe Gan Films

Study Of Leakage Defects On Gan Films By Conductive Atomic Force Microscopy

Investigation of Current-Voltage Characteristics of N- GaN/ I- Al X Ga 1-X N /n -Gan Structures

Spatial Variation of Electrical Properties in Lateral Epitaxially Overgrown Gan

Electric current induced extrinsic asymmetric – behavior in epitaxial thin films on single crystal substrates

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Band Offsets of Non-Polar A-plane GaN/AlN and AlN/GaN Heterostructures Measured by X-ray Photoemission Spectroscopy

Anisotropic Defect Structure of GaN Film Grown by MOCVD

X-ray Studies of As-doped GaN Grown by Plasma-Assisted Molecular Beam Epitaxy

Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers

Current Imaging and Electromigration-Induced Splitting of Gan Nanowires As Revealed by Conductive Atomic Force Microscopy

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Optical Characterization of GaN Films by Photoreflectance and Photocurrent Measurement

Broadband Eddy Current Measurement of the Sheet Resistance of GaN Semiconductors

Influence of Polarities of GaN Substrates on Surface Morphologies and Physical Properties of Epitaxial Mg‐Doped GaN Films Grown by MOCVD

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations.

Investigation Of Charge Trapping At The Oxide/Semiconductor Interface For Mbe-Grown Gan Films

Forward Current Transport Mechanism and Schottky Barrier Characteristics of a Ni/Au Contact on N-Gan

Origins of GaN(0 0 0 1) surface reconstructions