Abstract:The role of threading dislocations in the intrinsic degradation of lateral GaN devices during high reverse bias stress tests (RBSTs) is largely unknown. We now present the results on lateral p-GaN/AlGaN/2DEG heterojunctions with a width of 200 μm in GaN-on-Si. A time-dependent permanent degradation of the heterojunction under high reverse bias and elevated temperatures can be observed, ultimately leading to a hard breakdown and device destruction. By using an integrated series p-GaN resistor, the device is protected from destruction and, consequently, the influence of dislocations on the degradation mechanism could be studied. Localization by emission microscopy could show that the transient current increase during a RBST is the result of the creation of a limited amount of highly localized leakage paths along the whole device width. We could establish a 1:1 correlation of leakage sites with a structural material degradation within the AlGaN barrier for nine individual positions on two different devices by planar transmission electron microscopy analysis. To unambiguously show whether dislocations in GaN-on-Si even should be considered a potential trigger for the RBST degradation in lateral heterojunctions, a combined planar and cross-sectional lamella approach was used for the first time for larger devices. This enabled the visualization of the three-dimensional propagation path of the dislocations close to the degradation sites. It was found that there is no statistically significant link between the material degradation and pre-existing dislocations. Our findings offer new insights into the GaN-on-Si material system, upon which upcoming power technologies are built upon.

Study Of Leakage Defects On Gan Films By Conductive Atomic Force Microscopy

Conductive Atomic Force Microscopy Study Of Mbe Gan Films

Investigation of Forward and Reverse Current Conduction in GaN Films by Conductive Atomic Force Microscopy

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Investigation Of Charge Trapping At The Oxide/Semiconductor Interface For Mbe-Grown Gan Films

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Anisotropic Defect Structure of GaN Film Grown by MOCVD

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations.

Crystal Defects in Gan on (0001) Sapphire

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD with High-Energy Ion Implanted Guard Rings

Defects Study of MOCVD Grown Β-Ga2o3films

Transient Leakage Current Technique for Mis Hemt (al2o3/algan/gan) Dielectric Semiconductor Interface Property Characterization

Spatial Variation of Electrical Properties in Lateral Epitaxially Overgrown Gan

On the Reverse Gate Leakage Current of AlGaN/GaN High Electron Mobility Transistors

On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE