Abstract:Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestanding (e.g. cantilever) and fixed (e.g. cavity) structures on different orientation silicon wafers for various applications in microelectromechanical systems (MEMS). {111} planes are the slowest etch rate plane in all kinds of anisotropic etchants and therefore, a prolonged etching always leads to the appearance of {111} facets at the sidewalls of the fabricated structures. In wet anisotropic etching, undercutting occurs at the extruded corners and the curved edges of the mask patterns on the wafer surface. The rate of undercutting depends upon the type of etchant and the shape of mask edges and corners. Furthermore, the undercutting takes place at the straight edges if they do not contain {111} planes. {100} and {110} silicon wafers are most widely used in MEMS as well as microelectronics fabrication.This paper reviews the fabrication techniques of convex corner on {100} and {110} silicon wafers using anisotropic wet chemical etching. Fabrication methods are classified mainly into two major categories: corner compensation method and two-steps etching technique. In corner compensation method, extra mask pattern is added at the corner. Due to extra geometry, etching is delayed at the convex corner and hence the technique relies on time delayed etching. The shape and size of the compensating design strongly depends on the type of etchant, etching depth and the orientation of wafer surface. In this paper, various kinds of compensating designs published so far are discussed. Two-step etching method is employed for the fabrication of perfect convex corners. Since the perfectly sharp convex corner is formed by the intersection of {111} planes, each step of etching defines one of the facets of convex corners. In this method, two different ways are employed to perform the etching process and therefore can be subdivided into two parts. In one case, lithography step is performed after the first step of etching, while in the second case, all lithography steps are carried out before the etching process, but local oxidation of silicon (LOCOS) process is done after the first step of etching. The pros and cons of all techniques are discussed.

Forming a Rounded Convex Corner by Using Two-Step Anisotropic KOH Wet Etching

Convex corner undercutting of {100} silicon in anisotropic KOH etching: the new step-flow model of 3-D structuring and first simulation results

A comprehensive review on convex and concave corners in silicon bulk micromachining based on anisotropic wet chemical etching

Maskless Etching Of Three-Dimensional Silicon Structures In Koh

Study on convex-corner undercutting formed by masked-maskless etching in aqueous KOH

A New Approach To Convex Corner Compensation For Anisotropic Etching Of (100)Si In Koh

A novel convex corner compensation for wet anisotropic etching on (100) silicon wafer

Which Etchant Used and Whether an Etching Mask Exists: How They Make Differences on Convex-Corner Undercutting Configuration and Compensation Criteria

Silicon (100) undercutting modelling and corner compensation structures design in wet anisotropic etching process

A New Explanation of Mask-corner Undercut in Anisotropic Silicon Etching: Saddle Point in Etching Rate Diagram

Fabrication of Polygonal Nanoholes by Localized Mask-Free Wet Anisotropic Etching

Study on compensation method for vertical trench using anisotropic wet etching

A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts

A Novel Anisotropic Wet Etching Process of (100)-Silicon with Areaefficiency on Convex Corner Compensation Patterns

Anisotropic etching of Si

Simulation of anisotropic chemical etching of crystalline silicon using a cellular automata model

Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching

Orientation-dependent surface morphology of crystalline silicon during anisotropic etching using a continuous cellular automaton

Simulation of Anisotropic Etching of Silicon using a Cellular Automata Model

Simulation of three-dimensional etch profile of silicon during orientation dependent anisotropic etching

The Model of Etching of (hkl) Planes in Monocrystalline Silicon